Method of and device for detecting micro-scratches
    2.
    发明授权
    Method of and device for detecting micro-scratches 有权
    检测微划痕的方法和装置

    公开(公告)号:US06449037B2

    公开(公告)日:2002-09-10

    申请号:US09864398

    申请日:2001-05-25

    IPC分类号: G01N2100

    CPC分类号: G01N21/21

    摘要: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

    摘要翻译: 方法和装置检测在晶片表面存在缺陷,即微划痕。 光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。 由晶片表面反射的光被转换为电信号,但是由于表面散射的任何光被尽可能地排除,从而有助于信号的形成。 电信号对应于从晶片表面反射的光的强度。 当光在晶片上扫描时,将电信号的值进行比较,以确定介质中是否存在缺陷。 因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射,所以可以成功监测晶片是否存在这种微划痕。 特别地,可以检测到在介质中形成的微划痕的缺陷,而不管诸如图案层的介质之下的结构如何。

    Method of and device for detecting micro-scratches

    公开(公告)号:US06528333B1

    公开(公告)日:2003-03-04

    申请号:US09584671

    申请日:2000-06-01

    IPC分类号: H01L2166

    CPC分类号: G01N21/21

    摘要: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.