公开(公告)号：US06449037B2

公开(公告)日：2002-09-10

申请号：US09864398

申请日：2001-05-25

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： G01N2100

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

摘要翻译： 方法和装置检测在晶片表面存在缺陷，即微划痕。 光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。 由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。 电信号对应于从晶片表面反射的光的强度。 当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。 因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。 特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

公开(公告)号：US06528333B1

公开(公告)日：2003-03-04

申请号：US09584671

申请日：2000-06-01

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： H01L2166

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

公开(公告)号：US06515293B1

公开(公告)日：2003-02-04

申请号：US09671207

申请日：2000-09-28

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

IPC分类号： G01N2186

CPC分类号： H01L22/26 ,  G01B11/0625 ,  H01L22/12

摘要： A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps. The thickness of a thin layer is directly detected from the luminance of light reflected by the cell, so that it can be precisely detected in a non-destructive manner, thus making it possible to detect the thickness of a thin layer in real time during the manufacture of a semiconductor device.

摘要翻译： 测量薄层厚度的方法，通过该厚度可以实时检测在晶片表面上形成的顶层的厚度及其装置。 该方法包括将光照射到电池上并从反射光获得亮度，检测与电池相邻的氧化物部位中的薄层的厚度，重复照射和检测步骤，从而形成多个亮度值 所述晶片和与所述单元相邻的氧化物部位中的薄层的多个厚度值，并且使用使用所述多个亮度值和在先前获得的多个厚度值来计算顶层的厚度的厚度计算公式 脚步。 从单元反射的光的亮度直接检测薄层的厚度，从而可以以非破坏性的方式精确地检测薄层的厚度，从而使得可以实时地检测薄层的厚度 制造半导体器件。

公开(公告)号：US06440760B1

公开(公告)日：2002-08-27

申请号：US09663644

申请日：2000-09-18

申请人： Hyung-suk Cho ,  Sang-mun Chon ,  Sang-bong Choi ,  Chung-sam Chun ,  Min-sub Kang

发明人： Hyung-suk Cho ,  Sang-mun Chon ,  Sang-bong Choi ,  Chung-sam Chun ,  Min-sub Kang

IPC分类号： G01R3126

CPC分类号： G01N21/55

摘要： Embodiments of the present invention include methods for measuring a semiconductor wafer which has been subjected to an etching process. Light is radiated at the semiconductor wafer. Light within a selected wavelength band reflected from the semiconductor wafer is measured to provide an output value. A ratio of the output value and a reference value is determined. The reference value may be based on light within the selected wavelength band reflected from a reference surface, such as a bare silicon reference surface. It is determined that the semiconductor wafer is under-etched if the determined ratio does not meet the reference value. A normalized optical impedance or a polarization ratio may be measured based on light within a selected wave length band reflected from the semiconductor wafer to provide the output value in various embodiments of the present invention. In further aspects of the present invention, a thickness of a remaining oxide layer is determined using an under-etch recipe when it is determined that a semiconductor wafer is under-etched and a thickness of a damaged/polymer layer may be determined using an over-etch recipe when it is determined that the semiconductor wafer is over-etched.

摘要翻译： 本发明的实施例包括用于测量经过蚀刻处理的半导体晶片的方法。 光在半导体晶片上被辐射。 测量从半导体晶片反射的选定波长带内的光以提供输出值。 确定输出值和参考值的比率。 参考值可以基于从诸如裸硅参考表面的参考表面反射的所选波长带内的光。 如果确定的比率不符合参考值，则确定半导体晶片被蚀刻。 可以基于从半导体晶片反射的所选波长带内的光来测量归一化的光阻抗或偏振比，以在本发明的各种实施例中提供输出值。 在本发明的另外的方面，当确定半导体晶片被低蚀刻并且可以使用过度蚀刻确定损坏/聚合物层的厚度时，使用蚀刻下配方确定剩余氧化物层的厚度 当确定半导体晶片被过蚀刻时，读取配方。

公开(公告)号：US07027638B2

公开(公告)日：2006-04-11

申请号：US09949111

申请日：2001-09-07

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Hyoung-jin Kim ,  Dong-chun Lee ,  Sang-bong Choi ,  Sung-gon Ryu

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Hyoung-jin Kim ,  Dong-chun Lee ,  Sang-bong Choi ,  Sung-gon Ryu

IPC分类号： G06K9/00

CPC分类号： G06T5/008 ,  G06T7/90 ,  G06T2207/20021 ,  G06T2207/30148

摘要： A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.

公开(公告)号：US06366688B1

公开(公告)日：2002-04-02

申请号：US09162267

申请日：1998-09-29

申请人： Chung-sam Jun ,  Jeong-kon Kim ,  Sang-moon Chon ,  Sang-bong Choi

发明人： Chung-sam Jun ,  Jeong-kon Kim ,  Sang-moon Chon ,  Sang-bong Choi

IPC分类号： G06K900

CPC分类号： G01R31/2886 ,  H01J2237/2817

摘要： There is provided a contact failure inspection system and method for semiconductor devices and a method of manufacturing semiconductor devices. Using digitized values for electron signals detected using a scanning electron microscope, contacts can be inspected to identify failures such as non-open contact holes. The contact failure inspection is performed by comparing the electron signal value detected from a unit area including at least one contact hole with values representative of the electron signal corresponding to a normal contact.

摘要翻译： 提供了一种用于半导体器件的接触故障检测系统和方法以及半导体器件的制造方法。 使用扫描电子显微镜检测的电子信号的数字化值可以被检查以识别诸如非开放接触孔的故障。 通过将从包括至少一个接触孔的单位区域检测到的电子信号值与表示与正常接触相对应的电子信号的值进行比较来进行接触故障检查。