Group IV metal precursors and a method of chemical vapor deposition using the same
    4.
    发明授权
    Group IV metal precursors and a method of chemical vapor deposition using the same 有权
    IV族金属前体和使用其的化学气相沉积方法

    公开(公告)号:US06689427B2

    公开(公告)日:2004-02-10

    申请号:US09933736

    申请日:2001-08-22

    IPC分类号: C23C1600

    CPC分类号: C23C16/409 C07C225/14

    摘要: An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-8 alkyl group; and R3 is a linear or branched C1-8 alkylene group. Also disclosed is a chemical vapor deposition method wherein a metal oxide thin film is formed on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability and is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.

    摘要翻译: 用于形成金属氧化物薄膜的式M(L)2的有机金属前体,其中M是电荷为+4的第IV族金属离子,L为带电荷的三齿配体, 配体由下式(I)表示:其中R 1和R 2各自独立地为直链或支链C 1-8烷基; 且R 3为直链或支链C 1-8亚烷基。 还公开了一种化学气相沉积方法,其中使用有机金属前体在基板上形成金属氧化物薄膜。 前体表现出优异的挥发性,热性质和水解稳定性,特别适用于沉积含有IV族金属如钛的多组分金属氧化物薄膜。