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公开(公告)号：US06894833B2
公开(公告)日：2005-05-17
申请号：US10110131
申请日：2001-08-20
CPC分类号： H01S5/50 , H01S5/02 , H01S5/0425 , H01S5/0607 , H01S5/2275 , H01S2301/14
摘要： The invention relates to a semiconductor optical amplifier including a buried guide active structure (12), characterized in that the guide active structure (12) is subjected to an external stress to render the gain of said amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of a material (50) against a ridge (15) surrounding said guide active structure (12).
摘要翻译： 本发明涉及一种包括掩埋导向有源结构（12）的半导体光放大器，其特征在于，所述导向有源结构（12）经受外部应力，以使所述放大器的增益对于所述光的偏振不敏感 所述外部应力来自由材料（50）沉积围绕所述引导活动结构（12）的脊（15）引起的力。
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公开(公告)号：US06751015B2
公开(公告)日：2004-06-15
申请号：US10110378
申请日：2002-04-11
申请人： Léon Goldstein , Jean-Yves Emery
发明人： Léon Goldstein , Jean-Yves Emery
IPC分类号： H01S300
CPC分类号： H01S5/10 , H01S5/0625 , H01S5/1064 , H01S5/1085 , H01S5/5009 , H01S2301/14
摘要： The invention concerns a semiconductor optical amplifier including at least two amplifier sections (30, 40) respectively favoring a higher gain of the TE mode and the TM mode of polarization of the light to be amplified, said sections each having an active guide structure (12) of the same thickness (e), the amplifier being characterized in that the active guide structure (12) of the two sections (30, 40) is subjected to respective different tension stresses and/or has a different geometry so as to render the overall gain of the amplifier insensitive to the polarization of said light to be amplified, and in that there is no discontinuity of the effective refractive index at the transition between the sections (30, 40).
摘要翻译： 本发明涉及一种包括至少两个放大器部分（30,40）的半导体光放大器，分别有利于TE模式的较高增益和待放大的光的TM偏振模式，所述部分各自具有主动导向结构（12 ），所述放大器的特征在于，两个部分（30,40）的主动导向结构（12）经受相应的不同张力应力和/或具有不同的几何形状，以使得 所述放大器的总增益对所述要被放大的光的偏振不敏感，并且在所述部分（30,40）之间的转变处，所述有效折射率没有不连续性。
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公开(公告)号：US06777768B2
公开(公告)日：2004-08-17
申请号：US10233398
申请日：2002-09-04
IPC分类号： H01L310232
CPC分类号： H01S5/50 , H01S5/1064 , H01S5/3054 , H01S5/3215
摘要： A semiconductor optical component is disclosed which includes a semiconductor material confinement layer containing acceptor dopants such that the doping is p-type doping. The confinement layer is deposited on another semiconductor layer and defines a plane parallel to the other semiconductor layer. Furthermore, the p-type doping concentration of the confinement layer has at least one gradient significantly different from zero in one direction in the plane. A method of fabricating the component is also disclosed.
摘要翻译： 公开了一种半导体光学部件，其包括含有受主掺杂剂的半导体材料限制层，使得掺杂为p型掺杂。 限制层沉积在另一个半导体层上并限定平行于另一个半导体层的平面。 此外，限制层的p型掺杂浓度在平面中具有至少一个与零在一个方向上不同的梯度。 还公开了一种制造该部件的方法。
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