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    System and method for generating and utilizing sample trigger blanking to obviate spurious data and increase sweep rate in an akinetic path-based swept laser
    6.
    发明授权
    System and method for generating and utilizing sample trigger blanking to obviate spurious data and increase sweep rate in an akinetic path-based swept laser 有权
    用于生成和利用样本触发消隐的系统和方法，以消除伪脉冲数据并增加基于扫描路径的扫频激光器中的扫描速率

    公开(公告)号：US09153939B1

    公开(公告)日：2015-10-06

    申请号：US14211524

    申请日：2014-03-14

    Applicant: INSIGHT PHOTONIC SOLUTIONS, INC.

    Inventor： Michael Minneman ,  Michael Crawford ,  Jason Ensher

    IPC: H01S3/10 ,  H01S5/0683 ,  H01S5/06 ,  H01S5/068 ,  H01S5/0625

    CPC classification number: H01S5/0683 ,  H01S5/0265 ,  H01S5/06 ,  H01S5/0607 ,  H01S5/0614 ,  H01S5/0617 ,  H01S5/0625 ,  H01S5/06256 ,  H01S5/068 ,  H01S5/06804 ,  H01S5/06808 ,  H01S5/06835 ,  H01S2301/02

    Abstract: A system and method for triggering data acquisition in a semiconductor laser system including outputting electromagnetic energy from the semiconductor laser over a range of wavelengths according to a signaling path. The signaling path includes a plurality of discrete data inputs to the semiconductor laser for outputting electromagnetic energy over a range of wavelengths and the signaling path includes one or more perturbances in transitioning from one wavelength to another wavelength along the signaling path. A series of triggering signals are generated for input to a measurement system by the semiconductor laser. The series of triggering signals include a non-uniform period between at least a first triggering signal and an adjacent second triggering signal, and the non-uniform period corresponds to at least one perturbance. The electromagnetic energy output from the semiconductor laser is detected based on the series of triggering signals.

    Abstract translation: 一种用于在半导体激光系统中触发数据采集的系统和方法，包括根据信令路径在一定波长范围内从半导体激光器输出电磁能。 信令路径包括到半导体激光器的多个离散数据输入，用于在波长范围上输出电磁能量，并且信令路径包括沿信令路径从一个波长转换到另一个波长的一个或多个扰动。 产生一系列触发信号用于通过半导体激光器输入到测量系统。 所述一系列触发信号包括至少第一触发信号和相邻的第二触发信号之间的非均匀周期，并且所述非均匀周期对应于至少一个扰动。 基于一系列触发信号检测来自半导体激光器的电磁能量。

    Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same
    8.
    发明授权
    Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same 有权
    双段半导体激光装置及其制造方法及其驱动方法

    公开(公告)号：US08575626B2

    公开(公告)日：2013-11-05

    申请号：US13553380

    申请日：2012-07-19

    Applicant: Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    Inventor： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

    IPC: H01L27/15 ,  H01L21/00

    CPC classification number: H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

    Abstract: A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

    Abstract translation: 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

    Laser diode element assembly and method of driving the same
    9.
    发明授权
    Laser diode element assembly and method of driving the same 有权
    激光二极管元件组装及其驱动方法

    公开(公告)号：US08483256B2

    公开(公告)日：2013-07-09

    申请号：US13417998

    申请日：2012-03-12

    Applicant: Tomoyuki Oki ,  Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe ,  Hiroyuki Yokoyama

    Inventor： Tomoyuki Oki ,  Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe ,  Hiroyuki Yokoyama

    IPC: H01S3/08

    CPC classification number: H01S5/0602 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/1064 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/166

    Abstract: A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1

    Abstract translation: 激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层 由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b） 形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1

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