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公开(公告)号：US12020960B2
公开(公告)日：2024-06-25
申请号：US17045887
申请日：2019-04-08
Applicant: LAM RESEARCH CORPORATION
Inventor： Jeremy George Smith , Eric A. Pape
IPC: H01L21/67 , G05B17/02 , H01L21/687
CPC classification number: H01L21/67248 , G05B17/02 , H01L21/67109 , H01L21/68771
Abstract: A temperature controller for substrate processing system includes memory that stores a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support, a temperature calculation module configured to calculate the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control model, and a heat transfer gas control module configured to adjust the heat transfer gas pressure based on the second temperature of the substrate calculated by the temperature calculation module and a desired third temperature of the substrate.
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公开(公告)号：US10770363B2
公开(公告)日：2020-09-08
申请号：US16056967
申请日：2018-08-07
Applicant: Lam Research Corporation
Inventor： Keith William Gaff , Tom Anderson , Keith Comendant , Ralph Jan-Pin Lu , Paul Robertson , Eric A. Pape , Neil Benjamin
IPC: H01L21/67 , H01L21/66 , H01L21/683
Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.
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公开(公告)号：US10340171B2
公开(公告)日：2019-07-02
申请号：US15157959
申请日：2016-05-18
Applicant: Lam Research Corporation
Inventor： Eric A. Pape
IPC: H01L21/687 , C04B41/87 , C23C28/04 , C04B37/00 , H01L21/683 , C23C16/455 , H01J37/32 , C23C16/44 , C23C16/458
Abstract: A substrate support in a substrate processing system includes a baseplate, a ceramic layer, and a bond layer. The ceramic layer is arranged on the baseplate to support a substrate. The bond layer is arranged between the ceramic layer and the baseplate. A seal is arranged between the ceramic layer and the baseplate around an outer perimeter of the bond layer. The seal includes an inner layer formed adjacent to the bond layer and an outer layer formed adjacent to the inner layer such that the inner layer is between the outer layer and the bond layer. The inner layer comprises a first material and the outer layer comprises a second material.
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公开(公告)号：US20170322546A1
公开(公告)日：2017-11-09
申请号：US15657858
申请日：2017-07-24
Applicant: LAM RESEARCH CORPORATION
Inventor： Ole Waldmann , Eric A. Pape , Carlos Leal-Verdugo , Keith William Gaff
IPC: G05B19/418 , H01L21/67
Abstract: A method of determining thermal stability of an upper surface of a substrate support assembly in a plasma processing apparatus includes: before processing of at least one substrate in the plasma processing apparatus and while powering an array of thermal control elements of the substrate support assembly to achieve a desired spatial and temporal temperature of the upper surface of the substrate support assembly, recording pre-process temperature data of the substrate support assembly; after the processing of the at least one substrate in the plasma processing apparatus and while powering the array of thermal control elements to achieve the desired spatial and temporal temperature of the upper surface of the substrate support assembly, recording post-process temperature data; comparing the post-process temperature data to the pre-process temperature data; and determining whether the post-process temperature data is within a predetermined tolerance range of the pre-process temperature data.
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公开(公告)号：US09779974B2
公开(公告)日：2017-10-03
申请号：US14860045
申请日：2015-09-21
Applicant: Lam Research Corporation
Inventor： Tao Zhang , Ole Waldmann , Eric A. Pape
IPC: H01L21/683 , H01L21/66 , H01L21/67 , G01K3/08 , G05D23/19
CPC classification number: H01L21/6831 , G05D23/1931 , H01L21/67109 , H01L21/67248 , H01L22/20
Abstract: A system for controlling a substrate temperature in a substrate processing system includes a substrate support device, a controller, a temperature sensor, and a thermal control element (TCE). The controller is configured to, during a first period, control the TCE to adjust the temperature of the substrate support device to a temperature value based on a temperature difference between the substrate temperature before the substrate is loaded onto the substrate support device and a desired temperature for the substrate support device. The temperature value is not equal to the desired temperature. The substrate is loaded onto the substrate support device after the first period begins and before the temperature of the substrate support device returns to the desired temperature. The controller is further configured to, during a second period following the first period, control the temperature of the substrate support device to the desired temperature for the substrate support device.
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Patent Agency Ranking
公开(公告)号：US20170148657A1
公开(公告)日：2017-05-25
申请号：US15292688
申请日：2016-10-13
Applicant: Lam Research Corporation
Inventor： Eric A. Pape
IPC: H01L21/683 , H01L21/67
CPC classification number: H01L21/6833 , H01L21/67103 , H01L21/6831
Abstract: A substrate support for supporting a substrate in a substrate processing system includes a plurality of thermal elements. The thermal elements are arranged in one or more thermal zones, and each of the thermal zones includes at least one of the thermal elements. Each of the thermal elements includes a first resistive material having a positive thermal coefficient of resistance and a second resistive material having a negative thermal coefficient of resistance. The second resistive material is electrically connected to the first material. At least one of the first resistive material and the second resistive material of each of the thermal elements is electrically connected to a power supply to receive power, and each of the thermal elements heats a respective one of the thermal zones based on the received power. At least one ceramic layer is arranged adjacent to the thermal elements.
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公开(公告)号：US20230420281A1
公开(公告)日：2023-12-28
申请号：US18244905
申请日：2023-09-11
Applicant: Lam Research Corporation
Inventor： Eric A. Pape , Dmitry Opaits , Jorge Luque , Jeffrey D. Bonde , Siyuan Tian
IPC: H01L21/68 , G01S17/48 , H01L21/683 , G01N21/956 , G01B21/24 , G01B21/12
CPC classification number: H01L21/681 , G01S17/48 , H01L21/6833 , G01N21/956 , G01B21/24 , G01B21/12 , H01L21/67288
Abstract: Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.
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公开(公告)号：US11791189B2
公开(公告)日：2023-10-17
申请号：US16153383
申请日：2018-10-05
Applicant: Lam Research Corporation
Inventor： Eric A. Pape , Dmitry Opaits , Jorge Luque , Jeffrey D. Bonde , Siyuan Tian
IPC: H01L21/68 , G01B21/12 , G01N21/956 , G01S17/48 , H01L21/683 , G01B21/24 , H01L21/67
CPC classification number: H01L21/681 , G01B21/12 , G01B21/24 , G01N21/956 , G01S17/48 , H01L21/6833 , H01L21/67288
Abstract: Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.
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公开(公告)号：US10764966B2
公开(公告)日：2020-09-01
申请号：US15586178
申请日：2017-05-03
Applicant: LAM RESEARCH CORPORATION
Inventor： Yuma Ohkura , Darrell Ehrlich , Eric A. Pape
Abstract: A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, at least one of a heating layer and a ceramic layer arranged on the baseplate, and a plurality of heating elements provided within the at least one of the heating layer and the ceramic layer. The plurality of heating elements includes a first material having a first electrical resistance. Wiring is provided through the baseplate in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone to a first heating element of the plurality of heating elements. The first heating element is arranged in a second zone of the plurality of heating zones and the electrical connection includes a second material having a second electrical resistance that is less than the first electrical resistance.
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公开(公告)号：US10690414B2
公开(公告)日：2020-06-23
申请号：US14966198
申请日：2015-12-11
Applicant: Lam Research Corporation
Inventor： Keith William Gaff , Benny Wu , Eric A. Pape
Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a multi-plane heater such as a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate. The multi-plane heater includes at least one pair of vertically offset heating elements connected in series or parallel to control heating output in a heating zone on the substrate support. The thermal control elements can be powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones.
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