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公开(公告)号：US20240096713A1
公开(公告)日：2024-03-21
申请号：US18256665
申请日：2021-12-14
发明人： Yan Zhang , Ye Feng , Dipongkar Talukder , Jeffrey D. Bonde , Weng Foong Woo , Karthik Thimmavajjula , Jorge Luque
CPC分类号： H01L22/20 , G06N20/00 , H01L21/67253
摘要： Methods and systems for using a time-series of spectra to identify endpoint of a multi-step semiconductor fabrication processes such as multi-step deposition and multi-step etch processes. One method includes accessing a virtual carpet (e.g., a machine learning model) that is formed from a time-series of spectra for the multi-step processes collected during a training operation. During production, in-situ time-series of spectra are compared to the virtual carpet as part of end pointing of multi-step fabrication processes.
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公开(公告)号：US10242849B2
公开(公告)日：2019-03-26
申请号：US15479597
申请日：2017-04-05
发明人： Yassine Kabouzi , Jorge Luque , Andrew D. Bailey, III , Mehmet Derya Tetiker , Ramkumar Subramanian , Yoko Yamaguchi
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/67 , H01L21/66
摘要： A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.
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公开(公告)号：US09941178B2
公开(公告)日：2018-04-10
申请号：US15353305
申请日：2016-11-16
IPC分类号： H01L21/00 , H01L21/66 , H01L21/3065 , H01L21/67 , H01L21/768
CPC分类号： H01L22/26 , H01L21/3065 , H01L21/67253 , H01L21/76898 , H01L22/12
摘要： Systems and methods for processing a semiconductor wafer includes a plasma processing chamber. The plasma processing chamber includes an exterior, an interior region with a wafer receiving mechanism and a viewport disposed on a sidewall of the plasma processing chamber providing visual access from the exterior to the wafer received on the wafer receiving mechanism. A camera is mounted to the viewport of the plasma processing chamber on the exterior and coupled to an image processor. The image processor includes pattern recognition logic to match images of emerging pattern captured and transmitted by the camera, to a reference pattern and to generate signal defining an endpoint when a match is detected. A system process controller coupled to the image processor and the plasma processing chamber receives the signal from the image processor and adjusts controls of one or more resources to stop the etching operation.
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公开(公告)号：US20240255858A1
公开(公告)日：2024-08-01
申请号：US18565481
申请日：2022-05-23
发明人： Ye Feng , Yan Zhang , Jorge Luque
IPC分类号： G03F7/00
CPC分类号： G03F7/706841 , G03F7/70504 , G03F7/70625
摘要： A machine learning model may employ in situ chemical composition information, as an input, to characterize processes in real time, and optionally assist in process control. Chemical composition information may be obtained from an in situ emission spectrometer such an optical emission spectrometer.
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公开(公告)号：US10134569B1
公开(公告)日：2018-11-20
申请号：US15824061
申请日：2017-11-28
发明人： Luc Albarede , Yassine Kabouzi , Jorge Luque
摘要： A substrate processing system includes a processing chamber. A pedestal and a showerhead are arranged in the processing chamber. A surface plasmon resonance (SPR) fiber has a central portion disposed in the processing chamber, and opposing ends disposed outside the processing chamber. A light source provides input light at one end of the SPR fiber, and a detector receives output light from the other end of the SPR fiber. Surface plasmon waves and evanescent waves constitute the output light, which is processed and analyzed to determine a condition of the processing chamber.
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6.发明授权公开(公告)号：US09548189B2
公开(公告)日：2017-01-17
申请号：US14694356
申请日：2015-04-23
IPC分类号： H01J37/32
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/321 , H01J37/32449 , H01J37/32972 , H01J37/32981 , H01J37/3299 , H01J2237/334
摘要： A substrate etching system includes an etching control module, a filtering module, and an endpoint module. The etching control module selectively begins plasma etching of a substrate within an etching chamber. The filtering module, during the plasma etching of the substrate: receives a signal including endpoint information; decomposes the signal using empirical mode decomposition (EMD); and generates a filtered signal based on results of the EMD. The endpoint module indicates when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal. The etching control module ends the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached.
摘要翻译： 衬底蚀刻系统包括蚀刻控制模块，过滤模块和端点模块。 蚀刻控制模块选择性地开始蚀刻室内的衬底的等离子体蚀刻。 过滤模块在衬底的等离子体蚀刻期间：接收包括端点信息的信号; 使用经验模式分解（EMD）分解信号; 并根据EMD的结果生成滤波信号。 端点模块基于滤波信号指示何时已经到达基板的等离子体蚀刻的端点。 响应于已经达到衬底的等离子体蚀刻的终点的指示，蚀刻控制模块结束衬底的等离子体蚀刻。
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公开(公告)号：US20230420281A1
公开(公告)日：2023-12-28
申请号：US18244905
申请日：2023-09-11
发明人： Eric A. Pape , Dmitry Opaits , Jorge Luque , Jeffrey D. Bonde , Siyuan Tian
IPC分类号： H01L21/68 , G01S17/48 , H01L21/683 , G01N21/956 , G01B21/24 , G01B21/12
CPC分类号： H01L21/681 , G01S17/48 , H01L21/6833 , G01N21/956 , G01B21/24 , G01B21/12 , H01L21/67288
摘要： Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.
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公开(公告)号：US11791189B2
公开(公告)日：2023-10-17
申请号：US16153383
申请日：2018-10-05
发明人： Eric A. Pape , Dmitry Opaits , Jorge Luque , Jeffrey D. Bonde , Siyuan Tian
IPC分类号： H01L21/68 , G01B21/12 , G01N21/956 , G01S17/48 , H01L21/683 , G01B21/24 , H01L21/67
CPC分类号： H01L21/681 , G01B21/12 , G01B21/24 , G01N21/956 , G01S17/48 , H01L21/6833 , H01L21/67288
摘要： Various embodiments include a reflectometer and a reflectometry system for monitoring movements of a substrate, such as a silicon wafer. In one embodiment, a reflectometry system monitors and controls conditions associated with a substrate disposed within a process chamber. The process chamber includes a substrate-holding device having an actuator mechanism to control movement of the substrate with respect to the substrate-holding device. The reflectometry system includes a light source configured to emit a beam of light directed at the substrate, collection optics configured to receive light reflected from the substrate by the beam of light directed at the substrate and output a signal related to one or more conditions associated with the substrate, and a processor configured to process the signal and direct the actuator mechanism to control the movement of the substrate with respect to the substrate-holding device based on the signal. Other devices and methods are disclosed.
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公开(公告)号：US11056322B2
公开(公告)日：2021-07-06
申请号：US15667978
申请日：2017-08-03
发明人： Yassine Kabouzi , Luc Albarede , Andrew D. Bailey, III , Jorge Luque , Seonkyung Lee , Thorsten Lill
IPC分类号： H01J37/32 , H01L21/66 , H01L21/3065 , H01L21/311 , H01L21/308 , H01L21/3105 , H01L21/3213 , H01L49/02
摘要： A method for dry processing a substrate in a processing chamber is provided. The substrate is placed in the processing chamber. The substrate is dry processed, wherein the dry processing creates at least one gas byproduct. A concentration of the at least one gas byproduct is measured. The concentration of the at least one gas byproduct is used to determine processing rate of the substrate.
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公开(公告)号：US20170338160A1
公开(公告)日：2017-11-23
申请号：US15667978
申请日：2017-08-03
发明人： Yassine Kabouzi , Luc Albarede , Andrew D. Bailey, III , Jorge Luque , Seonkyung Lee , Thorsten Lill
IPC分类号： H01L21/66 , H01L21/308 , H01L21/3065 , H01L21/311 , H01L21/3105
CPC分类号： H01L22/26 , H01J37/32981 , H01L21/3065 , H01L21/3081 , H01L21/3083 , H01L21/31056 , H01L21/31116 , H01L21/32137 , H01L28/00
摘要： A method for dry processing a substrate in a processing chamber is provided. The substrate is placed in the processing chamber. The substrate is dry processed, wherein the dry processing creates at least one gas byproduct. A concentration of the at least one gas byproduct is measured. The concentration of the at least one gas byproduct is used to determine processing rate of the substrate.
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