公开(公告)号：US20140041226A1

公开(公告)日：2014-02-13

申请号：US14058792

申请日：2013-10-21

Applicant: Lam Research Corporation

Inventor： Enrico Magni ,  Eric Lenz

IPC: B23P17/04

CPC classification number: B23P17/04 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  Y10T29/494

Abstract: Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a chemical head. The chemical head including multiple first return conduits formed from a first flat region in a head surface and multiple second return conduits formed from a second flat region in the head surface. The second flat region being disposed immediately adjacent to the first flat region and the second flat region being in a plane substantially parallel to and offset from the first flat region. At least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface and the first angle being greater than about 20 degrees to a meniscus plane normal.

Abstract translation: 用于物理地限制施加在半导体晶片上的液体介质的装置，方法和系统包括化学头。 所述化学头包括由头表面中的第一平坦区域形成的多个第一返回管道和由头表面中的第二平坦区域形成的多个第二返回管道。 所述第二平坦区域紧邻所述第一平坦区域设置，所述第二平坦区域处于基本上平行于所述第一平坦区域并偏离所述第一平坦区域的平面中。 第一返回管道和第二返回管道中的至少一个相对于头部表面以第一角度形成，并且第一角度与弯月面法线大于约20度。

公开(公告)号：US20130065396A1

公开(公告)日：2013-03-14

申请号：US13671177

申请日：2012-11-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Rajinder Dhindsa ,  Eric Lenz

IPC: H01L21/306

CPC classification number: H01J21/36 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/306

Abstract: A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

Abstract translation: 一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。 气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。 气体分配构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。

公开(公告)号：US09694453B2

公开(公告)日：2017-07-04

申请号：US14058792

申请日：2013-10-21

Applicant: Lam Research Corporation

Inventor： Enrico Magni ,  Eric Lenz

IPC: B23P17/04 ,  B08B3/08 ,  H01L21/67

CPC classification number: B23P17/04 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  Y10T29/494

Abstract: Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a chemical head. The chemical head including multiple first return conduits formed from a first flat region in a head surface and multiple second return conduits formed from a second flat region in the head surface. The second flat region being disposed immediately adjacent to the first flat region and the second flat region being in a plane substantially parallel to and offset from the first flat region. At least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface and the first angle being greater than about 20 degrees to a meniscus plane normal.

公开(公告)号：US08822345B2

公开(公告)日：2014-09-02

申请号：US13671177

申请日：2012-11-07

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Eric Lenz

IPC: H01L21/302 ,  H01J37/32

CPC classification number: H01J21/36 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/306

Abstract: A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

Abstract translation: 一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。 气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。 气体分配构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。