Apparatus for spatial and temporal control of temperature on a substrate

    公开(公告)号:US11302556B2

    公开(公告)日:2022-04-12

    申请号:US16846582

    申请日:2020-04-13

    Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.

    Method for spatial and temporal control of temperature on a substrate
    2.
    发明授权
    Method for spatial and temporal control of temperature on a substrate 有权
    空间和时间控制衬底温度的方法

    公开(公告)号:US08735298B2

    公开(公告)日:2014-05-27

    申请号:US13657031

    申请日:2012-10-22

    Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

    Abstract translation: 用于控制基板的温度的装置具有温度控制的基座,加热器,金属板,电介质材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。 该粘合剂层具有机械柔性,并具有设计用于平衡加热器的热能和外部工艺的物理性能,以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。 介电材料层形成静电夹持机构并支撑基板。

    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE
    3.
    发明申请
    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE 审中-公开
    用于空间和时间控制温度在基板上的装置

    公开(公告)号:US20140332161A1

    公开(公告)日:2014-11-13

    申请号:US14340083

    申请日:2014-07-24

    Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.

    Abstract translation: 用于控制基板的温度的装置具有温度控制的基座,加热器,金属板,电介质材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。 该粘合剂层具有机械柔性,并具有设计用于平衡加热器的热能和外部工艺的物理性能,以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。

    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE
    4.
    发明申请
    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE 有权
    用于空间和时间控制温度在基板上的装置

    公开(公告)号:US20130072024A1

    公开(公告)日:2013-03-21

    申请号:US13657031

    申请日:2012-10-22

    Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

    Abstract translation: 用于控制基板的温度的装置具有温度控制的基座,加热器,金属板,电介质材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。 该粘合剂层具有机械柔性,并具有设计用于平衡加热器的热能和外部工艺的物理性能,以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。 介电材料层形成静电夹持机构并支撑基板。

    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE

    公开(公告)号:US20200251370A1

    公开(公告)日:2020-08-06

    申请号:US16846582

    申请日:2020-04-13

    Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.

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