公开(公告)号：US09392643B2

公开(公告)日：2016-07-12

申请号：US14062216

申请日：2013-10-24

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/68 ,  H01L23/28 ,  H01L23/52 ,  F27B5/14 ,  F27D11/02 ,  H05B3/00 ,  C23C14/54 ,  C23C16/458 ,  H01L21/67 ,  H01L21/3065 ,  H05B1/02 ,  H05B3/26 ,  H01L21/683

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.

Abstract translation: 用于制造用于基板支撑组件的加热板的示例性方法包括在至少一个片材中形成孔，在导体粉末的浆料上印刷，或者将预切割金属箔压制，或者将导体粉末的浆料喷涂在至少一个片材上 以形成平面加热器区域，电源线和电力返回线。 至少一个片材中的孔填充有导体粉末的浆料，以形成电源和电源返回通孔。 然后将片材对准，压制和结合以形成加热板。

公开(公告)号：US09093483B2

公开(公告)日：2015-07-28

申请号：US14198211

申请日：2014-03-05

Applicant: Lam Research Corporation

Inventor： Jason Augustino ,  Anthony de la Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty, Jr.

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/67 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C16/45565 ,  C23C16/45582 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/67017

Abstract: A showerhead electrode assembly for a plasma processing apparatus is provided. The showerhead electrode assembly includes a first member attached to a second member. The first and second members have first and second gas passages in fluid communication. When a process gas is flowed through the gas passages, a total pressure drop is generated across the first and second gas passages. A fraction of the total pressure drop across the second gas passages is greater than a fraction of the total pressure drop across the first gas passages.

Abstract translation: 提供了一种用于等离子体处理装置的喷头电极组件。 喷头电极组件包括附接到第二构件的第一构件。 第一和第二构件具有流体连通的第一和第二气体通道。 当处理气体流过气体通道时，跨越第一和第二气体通道产生总压降。 跨越第二气体通道的总压降的一小部分大于跨越第一气体通道的总压降的一部分。

公开(公告)号：US20140110060A1

公开(公告)日：2014-04-24

申请号：US14139238

申请日：2013-12-23

Applicant: Lam Research Corporation

Inventor： Keith William Gaff ,  Harmeet Singh ,  Keith Comendant ,  Vahid Vahedi

IPC: H01J37/20

CPC classification number: H01J37/20 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.

Abstract translation: 一种等离子体蚀刻系统，具有具有多个可独立控制的加热器区域的基板支撑组件。 等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

公开(公告)号：US20140096909A1

公开(公告)日：2014-04-10

申请号：US14101782

申请日：2013-12-10

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.

Abstract translation: 用于在等离子体处理室中支撑半导体衬底的半导体衬底支撑体的加热板包括具有加热器阵列阵列的第一层，其可操作以调节半导体衬底上的空间温度分布，以及具有一个或多个初级加热器的第二层 以提供半导体衬底的平均温度控制。 加热板可以结合在基板支撑件中，其中开关装置独立地向每个加热器区域供电，以通过开关的时分复用为每个加热器区域提供时间平均的功率。

公开(公告)号：US10804129B2

公开(公告)日：2020-10-13

申请号：US15988581

申请日：2018-05-24

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Alexander Matyushkin ,  Zhigang Chen ,  Keith Comendant

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01L21/67 ,  H01J37/32

Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.

公开(公告)号：US20200251370A1

公开(公告)日：2020-08-06

申请号：US16846582

申请日：2020-04-13

Applicant: LAM RESEARCH CORPORATION

Inventor： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

IPC: H01L21/683 ,  H05B3/26 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.

公开(公告)号：US20180374763A1

公开(公告)日：2018-12-27

申请号：US16056967

申请日：2018-08-07

Applicant: Lam Research Corporation

Inventor： Keith William Gaff ,  Tom Anderson ,  Keith Comendant ,  Ralph Jan-Pin Lu ,  Paul Robertson ,  Eric A. Pape ,  Neil Benjamin

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L22/14 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

公开(公告)号：US20170229327A1

公开(公告)日：2017-08-10

申请号：US15497992

申请日：2017-04-26

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/67 ,  H01J37/32 ,  C23C4/10 ,  C23C4/134 ,  C23C14/50 ,  C23C16/509 ,  C23C14/34 ,  C23C14/10 ,  C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  H01L21/683 ,  C23C14/54

CPC classification number: H01L21/67103 ,  C23C4/10 ,  C23C4/134 ,  C23C14/10 ,  C23C14/34 ,  C23C14/50 ,  C23C14/541 ,  C23C16/401 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

公开(公告)号：US09646861B2

公开(公告)日：2017-05-09

申请号：US14056604

申请日：2013-10-17

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H05B1/02 ,  H01L21/67 ,  C23C14/54 ,  C23C16/458 ,  H01L21/683 ,  H01L21/3065 ,  H05B3/26 ,  H05B3/00 ,  C23C14/50 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: A heating plate for use in a substrate support is configured to provide temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus. The heating plate includes an independently controllable heater zones operable to tune a temperature profile on an upper surface of the heating plate. The heater zones are each powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones and each respective heater zone is electrically connected to a different pair of power lines.

公开(公告)号：US20160300741A1

公开(公告)日：2016-10-13

申请号：US15183260

申请日：2016-06-15

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/67103 ,  C23C4/10 ,  C23C4/134 ,  C23C14/10 ,  C23C14/34 ,  C23C14/50 ,  C23C14/541 ,  C23C16/401 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.

Abstract translation: 半导体等离子体处理装置中的衬底支撑件包括以可伸缩多路复用布局布置的多个可独立控制的热区，以及用于独立地控制和加热热区的电子装置。 其中结合衬底支撑件的衬底支撑件包括静电夹持电极和温度控制的底板。 用于制造衬底支撑体的方法包括将具有热区，电源线，功率返回线和通孔的陶瓷或聚合物片粘合在一起。