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    Ceramic layer for electrostatic chuck including embedded faraday cage for RF delivery and associated methods
    1.
    发明授权
    Ceramic layer for electrostatic chuck including embedded faraday cage for RF delivery and associated methods 有权

    公开(公告)号：US10475623B2

    公开(公告)日：2019-11-12

    申请号：US15628528

    申请日：2017-06-20

    Applicant: Lam Research Corporation

    Inventor： Neil Martin Paul Benjamin ,  Henry Povolny ,  Anthony J. Ricci

    IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66

    Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

    Electrostatic Chuck Including Embedded Faraday Cage for RF Delivery and Associated Methods for Operation, Monitoring, and Control
    3.
    发明申请
    Electrostatic Chuck Including Embedded Faraday Cage for RF Delivery and Associated Methods for Operation, Monitoring, and Control 有权
    静电卡盘包括用于射频输送的嵌入式法拉第笼和相关的操作，监控和控制方法

    公开(公告)号：US20170032935A1

    公开(公告)日：2017-02-02

    申请号：US15170295

    申请日：2016-06-01

    Applicant: Lam Research Corporation

    Inventor： Neil Martin Paul Benjamin ,  Henry Povolny ,  Anthony J. Ricci

    IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683

    CPC classification number: H01J37/32082 ,  H01J2237/334 ,  H01L21/67253 ,  H01L21/6833 ,  H01L22/26

    Abstract: A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location.

    Abstract translation: 使用接合层将陶瓷层附接到基板的顶表面。 陶瓷层具有构造成支撑衬底的顶表面。 至少一个夹持电极位于陶瓷层的上部区域内。 初级射频（RF）功率输送电极位于垂直于至少一个钳位电极下方的位置处的陶瓷层内，使得主RF功率输出电极与至少一个钳位电极之间的陶瓷层的区域基本上 没有其他导电材料。 多个RF功率输送连接模块围绕陶瓷层的周边以基本均匀的方式分布。 每个RF功率输送连接模块被配置成在其相应位置处形成从基板到主RF功率输送电极的电连接。

    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE
    4.
    发明申请
    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE 审中-公开

    公开(公告)号：US20200251370A1

    公开(公告)日：2020-08-06

    申请号：US16846582

    申请日：2020-04-13

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

    IPC: H01L21/683 ,  H05B3/26 ,  H01L21/67 ,  H01J37/32

    Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.

    Apparatus for spatial and temporal control of temperature on a substrate
    7.
    发明授权
    Apparatus for spatial and temporal control of temperature on a substrate 有权

    公开(公告)号：US11302556B2

    公开(公告)日：2022-04-12

    申请号：US16846582

    申请日：2020-04-13

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

    IPC: H01L21/683 ,  H05B3/26 ,  H01L21/67 ,  H01J37/32

    Abstract: A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.

    Method for spatial and temporal control of temperature on a substrate
    10.
    发明授权
    Method for spatial and temporal control of temperature on a substrate 有权
    空间和时间控制衬底温度的方法

    公开(公告)号：US08735298B2

    公开(公告)日：2014-05-27

    申请号：US13657031

    申请日：2012-10-22

    Applicant: Lam Research Corporation

    Inventor： Anthony J. Ricci ,  Keith Comendant ,  James Tappan

    IPC: H01L21/3065

    CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01J2237/20 ,  H01L21/67103 ,  H01L21/6831 ,  H01L2221/683 ,  H05B3/26 ,  Y10T29/49146 ,  Y10T29/53252 ,  Y10T279/23

    Abstract: An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

    Abstract translation: 用于控制基板的温度的装置具有温度控制的基座，加热器，金属板，电介质材料层。 加热器在与金属板电绝缘的同时热耦合到金属板的下侧。 第一层粘合剂材料将金属板和加热器粘合到温度受控底座的顶部表面。 该粘合剂层具有机械柔性，并具有设计用于平衡加热器的热能和外部工艺的物理性能，以在设备的表面上提供期望的温度图案。 第二层粘合剂材料将介电材料层粘合到金属板的顶表面上。 该第二粘合剂层具有设计成将期望的温度图案转移到设备的表面的物理性质。 介电材料层形成静电夹持机构并支撑基板。

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