公开(公告)号：US20190198534A1

公开(公告)日：2019-06-27

申请号：US15993198

申请日：2018-05-30

Applicant: LG DISPLAY CO., LTD.

Inventor： SoYeon JE ,  Hyuk JI

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L27/1251 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/443 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

Abstract: A display device can include a first thin film transistor including a first active layer including a first semiconductor material, a first gate electrode overlapping with the first active layer, and a first source electrode and a first drain electrode both electrically connected to the first active layer; a separation insulating layer disposed on the first thin film transistor; and a second thin film transistor disposed on the separation insulating layer and including: a second active layer including a second semiconductor material different from the first semiconductor material, a second gate electrode overlapping with the second active layer, and a second source electrode and a second drain electrode both electrically connected to the second active layer, in which the second active layer of the second thin film transistor has a first thickness and a second thickness greater than the first thickness.