公开(公告)号：US20130207110A1

公开(公告)日：2013-08-15

申请号：US13717400

申请日：2012-12-17

Applicant: LG Display Co., Ltd.

Inventor： Hyun-Sik Seo ,  Bong-Chul Kim ,  Dae-Won Kim

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/786 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method of fabricating a thin film transistor includes sequentially forming a first metal layer on a substrate and a second metal layer of copper on the first metal layer; performing a plasma process to form a copper nitride layer on the second metal layer; patterning the copper nitride layer, the second metal layer and the first metal layer to form a gate electrode; forming a first gate insulating layer of silicon nitride on the substrate including the gate electrode; forming a second gate insulating layer of silicon oxide on the first gate insulating layer; forming a semiconductor layer on the second gate insulating layer formed of an oxide semiconductor material; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode spaced apart from the drain electrode.

Abstract translation: 制造薄膜晶体管的方法包括在第一金属层上依次形成基板上的第一金属层和铜的第二金属层; 执行等离子体处理以在所述第二金属层上形成氮化铜层; 图案化所述氮化铜层，所述第二金属层和所述第一金属层以形成栅电极; 在包括所述栅电极的所述衬底上形成氮化硅的第一栅极绝缘层; 在所述第一栅极绝缘层上形成氧化硅的第二栅极绝缘层; 在由氧化物半导体材料形成的第二栅极绝缘层上形成半导体层; 以及在所述半导体层上形成源电极和漏电极，所述源电极与所述漏电极间隔开。

公开(公告)号：US09012898B2

公开(公告)日：2015-04-21

申请号：US13754192

申请日：2013-01-30

Applicant: LG Display Co., Ltd.

Inventor： Min-Joo Kim ,  Ho-Cheol Kang ,  Dae-Won Kim ,  Young-Hoon Noh ,  Han-Saem Kang

IPC: H01L35/24 ,  H01L51/00 ,  G09G3/34 ,  H01L27/32 ,  H01L29/66 ,  G02F1/167 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G09G3/344 ,  G02F1/136227 ,  G02F1/167 ,  G02F2001/136231 ,  G02F2001/13685 ,  H01L27/3274 ,  H01L29/66757

Abstract: An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the second contact hole of the passivation layer; a second substrate attached to the first substrate in a facing manner; a common electrode formed on the second substrate; and an electrophoretic film formed between the first and second substrates.

Abstract translation: 电泳显示装置包括：具有形成在多个垂直像素行和多个水平像素行中的多个像素的第一基板; 形成在所述第一基板的每个垂直像素行处的多个数据线; 形成在第一基板的每个像素处的薄膜晶体管（TFT），包括源电极，漏电极，有机半导体层和栅电极; 形成在所述TFT和所述第一基板的数据线上的钝化层，并且包括暴露所述TFT的漏极的第一接触孔和暴露所述TFT的栅电极的第二接触孔; 形成在第一衬底的每个像素处的钝化层上并通过钝化层的第一接触孔与TFT的漏电极连接的像素电极; 多个栅极线，形成在第一基板的每个水平像素行处的钝化层上，并经由钝化层的第二接触孔与TFT的栅电极连接; 以面对方式附接到第一基板的第二基板; 形成在所述第二基板上的公共电极; 以及形成在第一和第二基板之间的电泳膜。

公开(公告)号：US08921837B2

公开(公告)日：2014-12-30

申请号：US13706216

申请日：2012-12-05

Applicant: LG Display Co., Ltd.

Inventor： Hyun-Sik Seo ,  Jeong-Hoon Lee ,  Dae-Won Kim ,  Yong-Ho Choi

IPC: H01L51/52 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L51/5262 ,  H01L27/1248 ,  H01L27/322 ,  H01L27/3272 ,  H01L51/5275

Abstract: The present invention is to provide an organic light emitting display device for preventing a thin-film transistor from being deteriorated due to hydrogen when forming a light compensation layer configured to enhance viewing angle, and the organic light emitting display device may include a first substrate and a second substrate comprising a plurality of pixels; a thin-film transistor formed at each pixel of the first substrate; a color filter layer formed at each pixel; an insulating layer formed on the color filter layer; a light compensation layer formed on the insulating layer and made of a material containing no hydrogen; a pixel electrode formed on the light compensation layer of each pixel; an organic light emitting unit formed on the pixel electrode to emit light; and a common electrode formed on the organic light emitting unit.

Abstract translation: 本发明提供一种有机发光显示装置，用于防止在形成用于增强视角的光补偿层时由于氢而使薄膜晶体管劣化，并且有机发光显示装置可包括第一基板和 包括多个像素的第二基板; 形成在所述第一基板的每个像素处的薄膜晶体管; 形成在每个像素处的滤色器层; 形成在滤色器层上的绝缘层; 形成在绝缘层上并由不含氢的材料制成的光补偿层; 形成在每个像素的光补偿层上的像素电极; 形成在像素电极上以发光的有机发光单元; 以及形成在有机发光单元上的公共电极。

公开(公告)号：US20130141323A1

公开(公告)日：2013-06-06

申请号：US13754192

申请日：2013-01-30

Applicant: LG DISPLAY CO., LTD.

Inventor： Min-Joo Kim ,  Ho-Cheol Kang ,  Dae-Won Kim ,  Young-Hoon Noh ,  Han-Saem Kang

IPC: G09G3/34

CPC classification number: G09G3/344 ,  G02F1/136227 ,  G02F1/167 ,  G02F2001/136231 ,  G02F2001/13685 ,  H01L27/3274 ,  H01L29/66757

Abstract: An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the second contact hole of the passivation layer; a second substrate attached to the first substrate in a facing manner; a common electrode formed on the second substrate; and an electrophoretic film formed between the first and second substrates.

Abstract translation: 电泳显示装置包括：具有形成在多个垂直像素行和多个水平像素行中的多个像素的第一基板; 形成在所述第一基板的每个垂直像素行处的多个数据线; 形成在第一基板的每个像素处的薄膜晶体管（TFT），包括源电极，漏电极，有机半导体层和栅电极; 形成在所述TFT和所述第一基板的数据线上的钝化层，并且包括暴露所述TFT的漏极的第一接触孔和暴露所述TFT的栅电极的第二接触孔; 形成在第一衬底的每个像素处的钝化层上并通过钝化层的第一接触孔与TFT的漏电极连接的像素电极; 多个栅极线，形成在第一基板的每个水平像素行处的钝化层上，并经由钝化层的第二接触孔与TFT的栅电极连接; 以面对方式附接到第一基板的第二基板; 形成在所述第二基板上的公共电极; 以及形成在第一和第二基板之间的电泳膜。

公开(公告)号：US08937311B2

公开(公告)日：2015-01-20

申请号：US13717400

申请日：2012-12-17

Applicant: LG Display Co., Ltd.

Inventor： Hyun-Sik Seo ,  Bong-Chul Kim ,  Dae-Won Kim

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/786 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method of fabricating a thin film transistor includes sequentially forming a first metal layer on a substrate and a second metal layer of copper on the first metal layer; performing a plasma process to form a copper nitride layer on the second metal layer; patterning the copper nitride layer, the second metal layer and the first metal layer to form a gate electrode; forming a first gate insulating layer of silicon nitride on the substrate including the gate electrode; forming a second gate insulating layer of silicon oxide on the first gate insulating layer; forming a semiconductor layer on the second gate insulating layer formed of an oxide semiconductor material; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode spaced apart from the drain electrode.

Abstract translation: 制造薄膜晶体管的方法包括在第一金属层上依次形成基板上的第一金属层和铜的第二金属层; 执行等离子体处理以在所述第二金属层上形成氮化铜层; 图案化所述氮化铜层，所述第二金属层和所述第一金属层以形成栅电极; 在包括所述栅电极的所述衬底上形成氮化硅的第一栅极绝缘层; 在所述第一栅极绝缘层上形成氧化硅的第二栅极绝缘层; 在由氧化物半导体材料形成的第二栅极绝缘层上形成半导体层; 以及在所述半导体层上形成源电极和漏电极，所述源电极与所述漏电极间隔开。