公开(公告)号：US11075248B2

公开(公告)日：2021-07-27

申请号：US16440559

申请日：2019-06-13

Applicant: LG DISPLAY CO., LTD.

Inventor： MiKyung Park ,  YongCheol Kim

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/50

Abstract: An organic light emitting display apparatus includes a first electrode on a substrate and a plurality of organic layers on the first electrode and including a first region and a second region. The organic light emitting display apparatus further includes a second electrode on the plurality of organic layers. A thickness of the plurality of organic layers in the first region can be different from a thickness of the plurality of organic layers in the second region.

公开(公告)号：US08866141B2

公开(公告)日：2014-10-21

申请号：US13726802

申请日：2012-12-26

Applicant: LG Display Co., Ltd.

Inventor： KiSul Cho ,  MiKyung Park ,  JaeYeong Choi

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/07 ,  H01L29/417

CPC classification number: H01L29/78669 ,  H01L27/0705 ,  H01L29/41733 ,  H01L29/6675 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/78678 ,  H01L29/7869

Abstract: A thin film transistor and a method for fabricating the same are disclosed. The thin film transistor includes: a gate electrode formed on a substrate and having a plurality of horizontal electrode parts spaced apart at regular intervals; a gate insulating film formed over the entire surface of the substrate including the gate electrode; an active pattern formed on the gate insulating film above the plurality of horizontal electrode parts; an etch stop film pattern formed above the active pattern and the gate insulating film so as to overlap top portions of the active pattern and the gate electrode and; a source electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of adjacent horizontal electrode parts; and a drain electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of horizontal electrode parts located on the outermost ends.

Abstract translation: 公开了一种薄膜晶体管及其制造方法。 薄膜晶体管包括：形成在基板上并具有以规则间隔隔开的多个水平电极部分的栅电极; 在包括所述栅电极的所述基板的整个表面上形成的栅极绝缘膜; 形成在多个水平电极部分上方的栅极绝缘膜上的有源图案; 蚀刻停止膜图案，形成在有源图案和栅极绝缘膜之上，以便与有源图案和栅电极的顶部重叠; 形成在有源图案上的源电极，栅极绝缘膜和蚀刻停止膜图案，以便与相邻的水平电极部分的顶部部分重叠; 以及形成在有源图案，栅极绝缘膜和蚀刻停止膜图案上以与位于最外端的水平电极部分的顶部部分重叠的漏电极。