公开(公告)号：US20150091006A1

公开(公告)日：2015-04-02

申请号：US14562540

申请日：2014-12-05

Applicant: LG Display Co., Ltd.

Inventor： Kisul Cho ,  Seongmoh Seo

IPC: H01L29/786 ,  H01L23/532 ,  G02F1/1362 ,  G02F1/1335 ,  G02F1/1343 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L29/7869 ,  G02F1/133514 ,  G02F1/134336 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133519 ,  G02F2001/134372 ,  G02F2001/136222 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66742 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized

Abstract translation: 本公开涉及具有增强的特性和稳定性的具有金属氧化物半导体层的薄膜晶体管基板。 本公开还涉及一种用于制造薄膜晶体管基板的方法，其中对金属氧化物半导体层进行热处理，并且通过热处理对基板的损坏最小化

公开(公告)号：US09312320B2

公开(公告)日：2016-04-12

申请号：US14466758

申请日：2014-08-22

Applicant: LG Display Co., Ltd.

Inventor： Hyunho Kim ,  Seokwoo Lee ,  Heedong Choi ,  Sangjin Lee ,  Seongmoh Seo

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L49/02 ,  H01L29/49

CPC classification number: H01L27/3265 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/4908 ,  H01L51/52 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/558

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate electrode positioned on the gate insulating layer at a location corresponding to the active layer, a capacitor upper electrode positioned on the gate insulating layer at a location corresponding to the capacitor lower electrode, a first electrode positioned to be separated from the gate electrode and the capacitor upper electrode, an interlayer insulating layer positioned on the gate electrode, the capacitor upper electrode, and the first electrode, a source electrode and a drain electrode positioned on the interlayer insulating layer, and a bank layer positioned on the source and drain electrodes.

公开(公告)号：US08835203B2

公开(公告)日：2014-09-16

申请号：US13969236

申请日：2013-08-16

Applicant: LG Display Co., Ltd.

Inventor： Hyunho Kim ,  Seokwoo Lee ,  Heedong Choi ,  Sangjin Lee ,  Seongmoh Seo

IPC: H01L21/00 ,  H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L27/3265 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/4908 ,  H01L51/52 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/558

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate electrode positioned on the gate insulating layer at a location corresponding to the active layer, a capacitor upper electrode positioned on the gate insulating layer at a location corresponding to the capacitor lower electrode, a first electrode positioned to be separated from the gate electrode and the capacitor upper electrode, an interlayer insulating layer positioned on the gate electrode, the capacitor upper electrode, and the first electrode, a source electrode and a drain electrode positioned on the interlayer insulating layer, and a bank layer positioned on the source and drain electrodes.

Abstract translation: 提供了一种有机发光二极管（OLED）显示器及其制造方法。 OLED显示器包括位于基板上的基板，有源层和电容器下电极，位于有源层和电容器下电极上的栅极绝缘层，位于对应于该栅极绝缘层的位置处的栅极绝缘层上的栅电极 有源层，位于对应于电容器下电极的位置处于栅极绝缘层上的电容器上电极，位于与栅电极和电容器上电极分离的第一电极，位于栅电极上的层间绝缘层， 电容器上电极和第一电极，位于层间绝缘层上的源电极和漏电极以及位于源电极和漏电极上的堤层。

公开(公告)号：US08932902B2

公开(公告)日：2015-01-13

申请号：US13717564

申请日：2012-12-17

Applicant: LG Display Co., Ltd.

Inventor： Kisul Cho ,  Seongmoh Seo

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G02F1/133514 ,  G02F1/134336 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133519 ,  G02F2001/134372 ,  G02F2001/136222 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66742 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.

Abstract translation: 本公开涉及具有增强的特性和稳定性的具有金属氧化物半导体层的薄膜晶体管基板。 本公开还涉及一种制造薄膜晶体管基板的方法，其中对金属氧化物半导体层进行热处理，并且通过热处理对基板的损坏最小化。

公开(公告)号：US09437746B2

公开(公告)日：2016-09-06

申请号：US14562540

申请日：2014-12-05

Applicant: LG Display Co., Ltd.

Inventor： Kisul Cho ,  Seongmoh Seo

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L23/532

CPC classification number: H01L29/7869 ,  G02F1/133514 ,  G02F1/134336 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133519 ,  G02F2001/134372 ,  G02F2001/136222 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66742 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.

公开(公告)号：US09324774B2

公开(公告)日：2016-04-26

申请号：US14466730

申请日：2014-08-22

Applicant: LG Display Co., Ltd.

Inventor： Hyunho Kim ,  Seokwoo Lee ,  Heedong Choi ,  Sangjin Lee ,  Seongmoh Seo

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L49/02 ,  H01L29/49

CPC classification number: H01L27/3265 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/4908 ,  H01L51/52 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/558

Abstract: An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate electrode positioned on the gate insulating layer at a location corresponding to the active layer, a capacitor upper electrode positioned on the gate insulating layer at a location corresponding to the capacitor lower electrode, a first electrode positioned to be separated from the gate electrode and the capacitor upper electrode, an interlayer insulating layer positioned on the gate electrode, the capacitor upper electrode, and the first electrode, a source electrode and a drain electrode positioned on the interlayer insulating layer, and a bank layer positioned on the source and drain electrodes.

公开(公告)号：US20130341624A1

公开(公告)日：2013-12-26

申请号：US13717564

申请日：2012-12-17

Applicant: LG DISPLAY CO., LTD.

Inventor： Kisul Cho ,  Seongmoh Seo

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/133514 ,  G02F1/134336 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133519 ,  G02F2001/134372 ,  G02F2001/136222 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66742 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.

Abstract translation: 本公开涉及具有增强的特性和稳定性的具有金属氧化物半导体层的薄膜晶体管基板。 本公开还涉及一种制造薄膜晶体管基板的方法，其中对金属氧化物半导体层进行热处理，并且通过热处理对基板的损坏最小化。