Driving thin-film transistor and organic light-emitting display device using the same

    公开(公告)号:US10256429B2

    公开(公告)日:2019-04-09

    申请号:US15859017

    申请日:2017-12-29

    Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.

    Organic electroluminescent device
    2.
    发明授权
    Organic electroluminescent device 有权
    有机电致发光器件

    公开(公告)号:US09530830B2

    公开(公告)日:2016-12-27

    申请号:US14745684

    申请日:2015-06-22

    Abstract: Disclosed is an organic electroluminescent device (OELD) includes a first substrate including a pixel region that includes an element region and a light emission region; a storage capacitor disposed at the element region, and including a first storage electrode, a first buffer layer on the first storage electrode, and a second storage electrode on the first buffer layer; a second buffer layer on the storage capacitor; a plurality of TFTs on the second buffer layer at the element region; and a passivation layer on the plurality of TFTs, wherein the storage capacitor overlaps at least one of the plurality of TFTs.

    Abstract translation: 公开了一种有机电致发光器件(OELD),包括:包括元件区域和发光区域的像素区域的第一衬底; 设置在元件区域的存储电容器,包括第一存储电极,第一存储电极上的第一缓冲层和第一缓冲层上的第二存储电极; 存储电容器上的第二缓冲层; 元件区域上的第二缓冲层上的多个TFT; 以及多个TFT上的钝化层,其中所述存储电容器与所述多个TFT中的至少一个重叠。

    TFT substrate and display device including the same

    公开(公告)号:US11710793B2

    公开(公告)日:2023-07-25

    申请号:US16418406

    申请日:2019-05-21

    Abstract: A thin film transistor (TFT) substrate includes a TFT on the substrate. The TFT includes an active patterned layer which is made of a polycrystalline silicon, which includes a channel portion, a source portion and a drain portion, and in which protrusions are formed at boundaries between grains and recess spaces are formed between the protrusions. A barrier pattern film fills the recess spaces and forms a flat surface with the protrusions. A gate electrode is on a gate insulating layer located on the barrier pattern film and the protrusions and overlays or corresponds to the channel portion. A source electrode and a drain electrode are on the gate electrode and respectively contact the source portion and the drain portion.

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