公开(公告)号：US09246040B2

公开(公告)日：2016-01-26

申请号：US13650974

申请日：2012-10-12

Applicant: LG ELECTRONICS INC.

Inventor： Junoh Shin ,  Huijae Lee ,  Sungeun Lee ,  Jeonghun Son

IPC: H01L31/05 ,  H01L31/076 ,  H01L31/02 ,  H01L31/046 ,  H01L31/18

CPC classification number: H01L31/076 ,  H01L31/02008 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/548

Abstract: A thin film solar cell module according to an embodiment of the invention includes a substrate, a plurality of solar cells each including a first electrode on the substrate, a second electrode on the first electrode, and a photoelectric conversion unit between the first electrode and the second electrode, a ribbon positioned on each of first and second outermost solar cells among the solar cells, and a conductive adhesive part positioned between the first outermost solar cell and the ribbon and between the second outermost solar cell and the ribbon. The conductive adhesive part positioned between the second electrode of the first outermost solar cell and the ribbon includes a first connector, which is electrically connected to the first electrode, the photoelectric conversion unit, and the second electrode of the first outermost solar cell.

Abstract translation: 根据本发明的实施例的薄膜太阳能电池模块包括基板，多个太阳能电池，每个太阳能电池单元包括在基板上的第一电极，第一电极上的第二电极和第一电极与第一电极之间的光电转换单元 第二电极，位于太阳能电池中的第一和第二最外太阳能电池中的每一个上的带状物和位于第一最外太阳能电池和带之间以及第二最外太阳能电池和带之间的导电粘合剂部分。 位于第一最外太阳能电池的第二电极和带之间的导电粘合剂部分包括电连接到第一最外太阳能电池的第一电极，光电转换单元和第二电极的第一连接器。

公开(公告)号：US10861998B2

公开(公告)日：2020-12-08

申请号：US16007449

申请日：2018-06-13

Applicant: LG ELECTRONICS INC.

Inventor： Junoh Shin ,  Kitae An ,  Huijae Lee ,  Hyeunseok Cheun

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0735 ,  H01L31/0304

Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell including forming a compound semiconductor layer; and forming a defect-removed portion formed of an empty space through removing a portion of the compound semiconductor layer where a defect existed prior to removal. The forming of the defect-removed portion includes forming a mask material layer on the compound semiconductor layer; forming a mask layer through forming an opening at a portion of the mask material layer corresponding to the portion of the compound semiconductor layer where the defect exists; and etching the compound semiconductor layer for removing the portion of the compound semiconductor layer where the defect exists through the opening of the mask layer to form the defect-removed portion.