公开(公告)号：US12255187B2

公开(公告)日：2025-03-18

申请号：US17623853

申请日：2019-08-01

Applicant: LG ELECTRONICS INC.

Inventor： Jisoo Ko ,  Hyeyoung Yang ,  Wonjae Chang ,  Hyunwoo Cho

IPC: H01L25/075 ,  H01L23/00 ,  H01L33/62

Abstract: The present invention may be applied to display device-related technical fields and relates to a display device using a semiconductor light-emitting element, such as a micro light-emitting diode (LED), and a manufacturing method therefor. The present invention, according to one embodiment, may comprise: a substrate; a stepped film positioned on at least some pixel regions, among a plurality of individual pixel regions positioned on the substrate; an assembly electrode positioned on the substrate or the stepped film; an insulation layer positioned on the assembly electrode; a partition wall positioned on the insulation layer and defining an assembly groove having mounted therein a semiconductor light-emitting element forming the individual pixel; the semiconductor light-emitting element mounted in an assembly surface of the assembly groove; and a lighting electrode electrically connected to the semiconductor light-emitting element.

公开(公告)号：US12243964B2

公开(公告)日：2025-03-04

申请号：US17633520

申请日：2019-08-21

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae Chang ,  Jisoo Ko ,  Hyeyoung Yang ,  Hyunwoo Cho

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/00 ,  H01L33/62

Abstract: Provided in the present specification are a substrate structure having an exclusive design for allowing assembly on a substrate, at the same time, of a plurality of semiconductor light emitting devices having various colors, and a new type of semiconductor light emitting device, such that the semiconductor light emitting devices can be quickly and accurately assembled on the substrate with a concern about color mixing. Here, at least one of the plurality of semiconductor light emitting devices, according to one embodiment of the present invention, comprises a bump part located in the lateral direction of a surface to be assembled. An assembly groove in which the semiconductor light emitting device including the bump part is assembled is provided with a protrusion part facing toward the inside of the assembly groove.

公开(公告)号：US12080580B2

公开(公告)日：2024-09-03

申请号：US17628776

申请日：2020-02-11

Applicant: LG ELECTRONICS INC.

Inventor： Hyunwoo Cho ,  Bongchu Shim ,  Hyeyoung Yang ,  Jisoo Ko ,  Wonjae Chang

IPC: H01L21/68 ,  H01L21/683 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L21/68 ,  H01L21/6833 ,  H01L21/6835 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0093 ,  H01L2221/68354 ,  H01L2221/68368

Abstract: The present invention provides an assembly substrate used in a method for manufacturing a display device which mounts semiconductor light emitting devices on a predetermined position of an assembly substrate by using an electric field and a magnetic field. Specifically, the assembly substrate is characterized by comprising: a base part; a plurality of assembly electrodes formed extending in one direction and disposed on the base part; a dielectric layer laminated on the base part so as to cover the assembly electrodes; a partition wall formed on the base part and including a plurality of grooves for guiding the semiconductor light emitting devices to a predetermined position; and a metal shielding layer formed on the base part, wherein each of the plurality of grooves penetrates the partition wall so as to form a seating surface on which the guided light emitting devices are seated, and the metal shielding layer overlaps with a part of the seating surface such that an electric field formed on a part of the seating surface is shielded.

公开(公告)号：US10217877B2

公开(公告)日：2019-02-26

申请号：US15220172

申请日：2016-07-26

Applicant: LG ELECTRONICS INC.

Inventor： Jeongbeom Nam ,  Seunghwan Shim ,  Jisoo Ko

IPC: H01L31/00 ,  H01L31/0224 ,  H01L31/05 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/18

Abstract: Disclosed is a solar cell including a semiconductor substrate, a conductive area including first and second conductive areas disposed on one surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The electrode includes an adhesive layer disposed on the semiconductor substrate or the conductive area, an electrode layer disposed on the adhesive layer and including a metal as a main component, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer as a main component. The electrode layer has a thickness greater than a thickness of each of the adhesive layer and the barrier layer, and the barrier layer has a higher melting point than a melting point of the electrode layer.