公开(公告)号：US12148862B2

公开(公告)日：2024-11-19

申请号：US17763050

申请日：2019-09-25

Applicant: LG ELECTRONICS INC.

Inventor： Jina Jeon ,  Yongdae Kim ,  Myoungsoo Kim ,  Yoonchul Kim ,  Jungsub Kim ,  Sunghyun Moon ,  Yeonhong Jung

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: Discussed is a manufacturing method of a display apparatus, and the display apparatus. The display includes a substrate, an adhesive layer located on the substrate and including protruding portions, semiconductor light-emitting diodes located on the adhesive layer, an insulating layer located on the semiconductor light-emitting diodes and the adhesive layer, and wiring electrodes electrically connected to the semiconductor light-emitting diodes, wherein the protruding portions of the adhesive layer are positioned at regular intervals to correspond to the shapes of the contact surfaces of the semiconductor light-emitting diodes in contact with the adhesive layer.

公开(公告)号：US20230262492A1

公开(公告)日：2023-08-17

申请号：US17954990

申请日：2022-09-28

Applicant: LG ELECTRONICS INC.

Inventor： Myoungsoo Kim ,  Sunghoon Jung ,  Hongsuk Kim

IPC: H04W24/08 ,  H04W74/08 ,  H04W76/19

CPC classification number: H04W24/08 ,  H04W74/0841 ,  H04W76/19 ,  H04W80/02

Abstract: A method and apparatus for RACH-less activation in a wireless communication system is provided. The wireless device deactivates a Secondary Cell Group (SCG). The wireless device detects a beam failure of a Primary SCell (PSCell) in the SCG. The wireless device initiates a SCG failure information procedure to report the SCG failure. The wireless device skips a Media Access Control (MAC) reset procedure, wherein the MAC reset procedure includes stopping a Time Alignment Timer (TAT) for the SCG; transmitting SCG failure information. The wireless device determines that a random access procedure is not needed for activation of the SCG, based on the TAT being not expired.

公开(公告)号：US12243854B2

公开(公告)日：2025-03-04

申请号：US17736812

申请日：2022-05-04

Applicant: LG ELECTRONICS INC.

Inventor： Myoungsoo Kim ,  Changseo Park ,  Gunho Kim ,  Minwoo Lee ,  Jungsub Kim

IPC: H01L25/075 ,  H01L33/38

Abstract: An overlapping assembly substrate structure for semiconductor light emitting devices, includes a first assembly substrate structure and a second assembly substrate structure disposed spaced apart from each other. The first assembly substrate structure can include a first electrode and a second electrode spaced apart by a first distance and a first partition wall having a circular first assembly hole to accommodate a semiconductor light emitting device having a circular shape. Further, the second assembly substrate structure can include a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance and a second partition wall having an elliptical second assembly hole to accommodate a semiconductor light emitting device having an elliptical shape.

公开(公告)号：US12237359B2

公开(公告)日：2025-02-25

申请号：US17257190

申请日：2018-07-11

Applicant: LG ELECTRONICS INC.

Inventor： Jungsub Kim ,  Younghak Chang ,  Myoungsoo Kim ,  Yeonhong Jung

IPC: H01L27/15 ,  H01L33/02 ,  H01L33/20 ,  H01L33/38

Abstract: Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion. The intermediate layer includes a first layer including second conductive impurities and a second layer having a higher concentration of the second conductive impurities than the first layer, wherein the first layer and the second layer are sequentially and repetitively stacked.