公开(公告)号：US12243854B2

公开(公告)日：2025-03-04

申请号：US17736812

申请日：2022-05-04

Applicant: LG ELECTRONICS INC.

Inventor： Myoungsoo Kim ,  Changseo Park ,  Gunho Kim ,  Minwoo Lee ,  Jungsub Kim

IPC: H01L25/075 ,  H01L33/38

Abstract: An overlapping assembly substrate structure for semiconductor light emitting devices, includes a first assembly substrate structure and a second assembly substrate structure disposed spaced apart from each other. The first assembly substrate structure can include a first electrode and a second electrode spaced apart by a first distance and a first partition wall having a circular first assembly hole to accommodate a semiconductor light emitting device having a circular shape. Further, the second assembly substrate structure can include a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance and a second partition wall having an elliptical second assembly hole to accommodate a semiconductor light emitting device having an elliptical shape.

公开(公告)号：US12148862B2

公开(公告)日：2024-11-19

申请号：US17763050

申请日：2019-09-25

Applicant: LG ELECTRONICS INC.

Inventor： Jina Jeon ,  Yongdae Kim ,  Myoungsoo Kim ,  Yoonchul Kim ,  Jungsub Kim ,  Sunghyun Moon ,  Yeonhong Jung

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: Discussed is a manufacturing method of a display apparatus, and the display apparatus. The display includes a substrate, an adhesive layer located on the substrate and including protruding portions, semiconductor light-emitting diodes located on the adhesive layer, an insulating layer located on the semiconductor light-emitting diodes and the adhesive layer, and wiring electrodes electrically connected to the semiconductor light-emitting diodes, wherein the protruding portions of the adhesive layer are positioned at regular intervals to correspond to the shapes of the contact surfaces of the semiconductor light-emitting diodes in contact with the adhesive layer.

公开(公告)号：US11990565B2

公开(公告)日：2024-05-21

申请号：US17266406

申请日：2018-08-29

Applicant: LG ELECTRONICS INC.

Inventor： Jungsub Kim ,  Sunghyun Moon ,  Younghak Chang ,  Jina Jeon

IPC: H01L21/78 ,  H01L25/075 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L21/7806 ,  H01L25/0753 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Discussed is a display device having a plurality of semiconductor light-emitting diodes. At least one of the semiconductor light-emitting diodes has a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer that overlaps with the first conductive semiconductor layer, and the second conductive electrode being disposed on the second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; an undoped semiconductor layer disposed on the second conductive semiconductor layer; and protrusions formed of a porous material allowing electropolishing, and on the undoped semiconductor layer.

公开(公告)号：US12237359B2

公开(公告)日：2025-02-25

申请号：US17257190

申请日：2018-07-11

Applicant: LG ELECTRONICS INC.

Inventor： Jungsub Kim ,  Younghak Chang ,  Myoungsoo Kim ,  Yeonhong Jung

IPC: H01L27/15 ,  H01L33/02 ,  H01L33/20 ,  H01L33/38

Abstract: Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion. The intermediate layer includes a first layer including second conductive impurities and a second layer having a higher concentration of the second conductive impurities than the first layer, wherein the first layer and the second layer are sequentially and repetitively stacked.

公开(公告)号：US11798921B2

公开(公告)日：2023-10-24

申请号：US17530155

申请日：2021-11-18

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Jinhyung Lee ,  Jungsub Kim ,  Seongmin Moon ,  Younho Heo

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L21/6835 ,  H01L33/0093 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2933/0066

Abstract: Discussed is an assembly substrate used for a display device manufacturing method of mounting semiconductor light-emitting diodes on the assembly substrate at preset positions using electric field and magnetic field. The assembly substrate includes a base portion, a plurality of assembly electrodes on the base portion, a dielectric layer on the base portion to cover the assembly electrodes, a barrier wall on the base portion, and a metal shielding layer on the base portion, wherein the metal shielding layer overlaps the barrier wall.

公开(公告)号：US11211366B2

公开(公告)日：2021-12-28

申请号：US16834315

申请日：2020-03-30

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Jinhyung Lee ,  Jungsub Kim ,  Seongmin Moon ,  Younho Heo

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/683 ,  H01L33/62

Abstract: The present disclosure relates to an assembly substrate used for a display device manufacturing method in which semiconductor light-emitting diodes are placed on the assembly substrate at preset positions using electric field and magnetic field. Specifically, the assembly substrate includes a base portion, a plurality of assembly electrodes extending in one direction and disposed on the base portion, a dielectric layer stacked on the base portion to cover the assembly electrodes, a barrier wall formed on the base portion and having a plurality of recesses for guiding the semiconductor light-emitting diodes to the preset positions, and a metal shielding layer formed on the base portion, wherein the metal shielding layer overlaps the barrier wall so that an electric field formed between the assembly electrodes is shielded.