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公开(公告)号:US09518719B2
公开(公告)日:2016-12-13
申请号:US14621023
申请日:2015-02-12
Applicant: LG ELECTRONICS INC.
Inventor: Euna Moon , Hongkyu Lee , Yeonhong Jung
IPC: F21V9/16 , C09K11/77 , H01L25/075 , F21Y113/00 , H01L33/50
CPC classification number: F21V9/30 , C09K11/7721 , C09K11/7734 , C09K11/7774 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/0002 , Y02B20/181 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device is provided. The light emitting device includes a first white light source emitting a white light of which color coordinates exist within a MacAdam 10-step ellipse from color coordinates (0.4822, 0.3980); a second white light source emitting a white light of which color coordinates exist within a MacAdam 10-step ellipse from color coordinates (0.4180, 0.4337); and a third white light source emitting a white light of which color coordinates exist within a MacAdam 10-step ellipse from color coordinates (0.2806, 0.2981).
Abstract translation: 提供了一种发光器件。 发光器件包括从颜色坐标(0.4822,0.33980)发射白色光的第一白色光源,其中的色坐标存在于MacAdam 10步椭圆内; 从颜色坐标(0.4180,0.4337)发出在MacAdam 10步椭圆内存在颜色坐标的白光的第二白光源; 以及从颜色坐标(0.2806,0.2891)发射在MacAdam 10步椭圆内存在颜色坐标的白光的第三白光源。
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公开(公告)号:US12148862B2
公开(公告)日:2024-11-19
申请号:US17763050
申请日:2019-09-25
Applicant: LG ELECTRONICS INC.
Inventor: Jina Jeon , Yongdae Kim , Myoungsoo Kim , Yoonchul Kim , Jungsub Kim , Sunghyun Moon , Yeonhong Jung
IPC: H01L33/38 , H01L25/075 , H01L33/00 , H01L33/62
Abstract: Discussed is a manufacturing method of a display apparatus, and the display apparatus. The display includes a substrate, an adhesive layer located on the substrate and including protruding portions, semiconductor light-emitting diodes located on the adhesive layer, an insulating layer located on the semiconductor light-emitting diodes and the adhesive layer, and wiring electrodes electrically connected to the semiconductor light-emitting diodes, wherein the protruding portions of the adhesive layer are positioned at regular intervals to correspond to the shapes of the contact surfaces of the semiconductor light-emitting diodes in contact with the adhesive layer.
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公开(公告)号:US12237359B2
公开(公告)日:2025-02-25
申请号:US17257190
申请日:2018-07-11
Applicant: LG ELECTRONICS INC.
Inventor: Jungsub Kim , Younghak Chang , Myoungsoo Kim , Yeonhong Jung
Abstract: Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion. The intermediate layer includes a first layer including second conductive impurities and a second layer having a higher concentration of the second conductive impurities than the first layer, wherein the first layer and the second layer are sequentially and repetitively stacked.
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公开(公告)号:US10446529B2
公开(公告)日:2019-10-15
申请号:US15874720
申请日:2018-01-18
Applicant: LG ELECTRONICS INC.
Inventor: Younghak Chang , Minwoo Lee , Yeonhong Jung , Youngje Jo
IPC: H01L25/07 , H01L25/075 , H01L33/02 , H01L33/00 , H01L33/20 , H01L33/62 , H01L33/16 , H01L33/22 , H01L33/32
Abstract: A semiconductor light emitting device including a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer overlapping the first conductive semiconductor layer, on which the second conductive electrode is disposed; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Further, the second conductive semiconductor layer includes a first layer including a porous material capable of being electro-polished and disposed on an outer surface of the semiconductor light emitting device; a second layer disposed under the first layer and having a lower impurity concentration than the first layer; and a third layer disposed between the second layer and the active layer and having a higher impurity concentration than the second layer.
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