公开(公告)号：US20140116506A1

公开(公告)日：2014-05-01

申请号：US14146501

申请日：2014-01-02

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Hyunjung PARK ,  Junyong AHN ,  Seongeun LEE ,  Jiweon JEONG

IPC: H01L31/0236 ,  H01L31/0216

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.

Abstract translation: 太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板上形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二 电极接触第二类型半导体。 在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸 的蚀刻剂。

公开(公告)号：US20160020350A1

公开(公告)日：2016-01-21

申请号：US14866447

申请日：2015-09-25

Applicant: LG ELECTRONICS INC.

Inventor： Hyunjung PARK ,  Jiweon JEONG

IPC: H01L31/055 ,  H01L31/0296 ,  H01L31/0216

CPC classification number: H01L31/055 ,  H01L31/02168 ,  H01L31/0296 ,  H01L31/048 ,  Y02E10/52 ,  Y02E10/542

Abstract: A solar cell includes at least one photoelectric conversion layer; and at least one layer provided on a surface of the photoelectric conversion layer upon which light is incident, wherein the at least one layer contains semiconductor nanocrystals.

Abstract translation: 太阳能电池包括至少一个光电转换层; 以及设置在光入射的光电转换层的表面上的至少一层，其中所述至少一层含有半导体纳米晶体。

公开(公告)号：US20150129033A1

公开(公告)日：2015-05-14

申请号：US14605462

申请日：2015-01-26

Applicant: LG ELECTRONICS INC.

Inventor： Kyoungsoo LEE ,  Myungjun SHIN ,  Jiweon JEONG

IPC: H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/02366 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547

Abstract: A method for manufacturing asolar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate.

Abstract translation: 一种用于制造非晶体电池的方法包括通过使用干蚀刻方法对具有第一导电类型掺杂剂的半导体衬底的前表面进行纹理化，通过将第二导电型掺杂剂离子注入到半导体衬底的前表面中形成发射极层， 在所述半导体衬底的背表面上形成反钝化膜; 以及形成与所述发射极层电连接的第一电极和与所述半导体衬底的背面部分接触的第二电极。

公开(公告)号：US20140057384A1

公开(公告)日：2014-02-27

申请号：US14071467

申请日：2013-11-04

Applicant: LG Electronics Inc.

Inventor： Seongeun LEE ,  Jiweon JEONG

IPC: H01L31/0224

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/542 ,  Y02E10/547 ,  Y02P70/521

Abstract: Discussed herein are a solar cell and a fabricating method thereof. The solar cell includes a first conductivity-type semiconductor substrate, a second conductivity-type semiconductor layer formed on a front surface of the first conductivity-type semiconductor substrate, and having a conductivity opposite to that of the first conductivity-type semiconductor substrate, an anti-reflection film including at least one opening exposing a part of a surface of the second conductivity-type semiconductor layer, and formed on the second conductivity-type semiconductor layer, at least one front electrode contacting a part of the surface of the second conductivity-type semiconductor layer exposed through the at least one opening, and at least one rear electrode formed on a rear surface of the first conductivity-type semiconductor substrate, wherein the at least one front electrode includes a metal containing silver and lead-free glass frit.

Abstract translation: 这里讨论的是太阳能电池及其制造方法。 太阳能电池包括第一导电型半导体衬底，形成在第一导电型半导体衬底的前表面上并具有与第一导电类型半导体衬底相反的导电性的第二导电型半导体层， 抗反射膜，其包括暴露第二导电型半导体层的表面的一部分的至少一个开口，并形成在第二导电型半导体层上，至少一个正极与第二导电性表面的一部分接触 型半导体层，以及形成在第一导电型半导体基板的后表面上的至少一个后电极，其中至少一个前电极包括含银和无铅玻璃料的金属 。