Active matric display device including polycrystalline silicon thin film transistor and manufacturing method of the same
    1.
    发明申请
    Active matric display device including polycrystalline silicon thin film transistor and manufacturing method of the same 审中-公开
    包括多晶硅薄膜晶体管的有源矩阵显示装置及其制造方法

    公开(公告)号:US20040144988A1

    公开(公告)日:2004-07-29

    申请号:US10742550

    申请日:2003-12-19

    Inventor: Yun Ho Jung

    Abstract: An active matrix display device includes a plurality of pixels arranged in a matrix form and at least one thin film transistor in each of the plurality of pixels, the at least one thin film transistor including a polycrystalline silicon layer formed by sequential lateral solidification. During fabrication, a mask with slits is disposed over a substrate having an amorphous silicon layer, a first laser beam is applied to a first area of the amorphous silicon layer through the mask, the substrate or laser is moved and the laser beam is applied to a second area of the amorphous silicon layer through the mask. Application of the laser crystallizes the amorphous silicon into a polycrystalline layer. The polycrystalline layers have a substantially identical number of grain boundaries, which in turn have a substantially identical direction and occur at substantially regular intervals.

    Abstract translation: 有源矩阵显示装置包括以矩阵形式布置的多个像素和多个像素中的每一个中的至少一个薄膜晶体管,所述至少一个薄膜晶体管包括通过顺序横向固化形成的多晶硅层。 在制造过程中,具有狭缝的掩模设置在具有非晶硅层的基板上,通过掩模将第一激光束施加到非晶硅层的第一区域,移动基板或激光,并将激光束施加到 通过掩模的非晶硅层的第二区域。 激光的应用将非晶硅结晶成多晶层。 多晶层具有基本上相同数量的晶界,其又具有基本相同的方向并且以基本上规则的间隔发生。

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