公开(公告)号：US20040195571A1

公开(公告)日：2004-10-07

申请号：US10774701

申请日：2004-02-10

Applicant: LG.PHILIPS LCD CO., LTD.

Inventor： Byung Chul Ahn ,  Byoung Ho Lim ,  Byeong Dae Choi

IPC: H01L029/04 ,  H01L031/20 ,  H01L021/00

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76838 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1277 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78603 ,  Y10S438/951

Abstract: A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.

Abstract translation: 公开了一种适合于选择性地蚀刻透明导电膜而不需要任何掩模工艺的透明导电膜的图案化方法，用于使用其的显示装置用薄膜晶体管及其制造方法。 在透明导电膜的图案化方法中，制备无机材料基板。 有机材料图案形成在无机材料基板的所需区域。 形成根据所述无机材料和所述有机材料具有不同结晶速率的薄膜。 根据所述结晶速率选择性地蚀刻薄膜。