公开(公告)号：US20020086469A1

公开(公告)日：2002-07-04

申请号：US09998311

申请日：2001-12-03

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Binn Kim ,  Hae Yeol Kim ,  Dae Hyun Nam

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method for fabricating a thin film transistor includes forming a buffer layer on a substrate, forming a first amorphous silicon layer on the buffer layer, forming a plurality of metal clusters on the first amorphous silicon layer, forming a second amorphous silicon layer on the metal clusters including the first amorphous silicon layer, and simultaneously applying a heat-treatment and an electrical field to crystallize the first and the second amorphous silicon layers.

Abstract translation: 一种制造薄膜晶体管的方法，包括在衬底上形成缓冲层，在缓冲层上形成第一非晶硅层，在第一非晶硅层上形成多个金属簇，在金属上形成第二非晶硅层 包括第一非晶硅层的簇，并且同时施加热处理和电场以使第一和第二非晶硅层结晶。