公开(公告)号：US20040043547A1

公开(公告)日：2004-03-04

申请号：US10648401

申请日：2003-08-27

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Seok-Woo Lee

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L29/66757 ,  H01L29/78609 ,  H01L29/78675

Abstract: A method of forming a polysilicon thin film transistor that includes depositing an amorphous silicon layer over a substrate, crystallizing the amorphous silicon layer into a polycrystalline silicon layer, patterning the polycrystalline silicon layer to form a polysilicon active layer for a thin film transistor, depositing silicon oxide over the polysilicon active layer to form a gate insulation layer under a vacuum condition, applying heat to anneal the gate insulation layer under a vacuum condition and forming a gate electrode on the annealed gate insulation layer.

Abstract translation: 一种形成多晶硅薄膜晶体管的方法，包括在衬底上沉积非晶硅层，将非晶硅层结晶成多晶硅层，构图多晶硅层以形成用于薄膜晶体管的多晶硅有源层，沉积硅 氧化物在多晶硅有源层上形成在真空条件下的栅极绝缘层，在真空条件下施加热量以退火栅极绝缘层，并在退火的栅极绝缘层上形成栅电极。

公开(公告)号：US20040087064A1

公开(公告)日：2004-05-06

申请号：US10695897

申请日：2003-10-30

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Seok-Woo Lee

IPC: H01L021/82

CPC classification number: H01L29/66757 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78696

Abstract: A method of forming a polysilicon thin film transistor is disclosed in the present invention. The method includes forming a buffer layer on a transparent substrate, forming an amorphous silicon layer on the buffer layer, crystallizing the amorphous silicon layer into a polysilicon layer using a sequential lateral solidification (SLS) method, patterning the polysilicon layer to form a polysilicon active layer, performing a rapid thermal annealing (RTA) process to the polysilicon active layer under a H2 atmosphere, performing a rapid thermal oxidation (RTO) process to form a silicon-oxidized layer on the polysilicon active layer after the RTA process, and forming a metal layer over the transparent substrate to cover the silicon-oxidized layer.

Abstract translation: 在本发明中公开了形成多晶硅薄膜晶体管的方法。 该方法包括在透明基板上形成缓冲层，在缓冲层上形成非晶硅层，使用顺序横向固化（SLS）方法将非晶硅层结晶成多晶硅层，构图多晶硅层以形成多晶硅活性物质 层，在H 2气氛下对多晶硅活性层进行快速热退火（RTA）处理，进行快速热氧化（RTO）工艺，以在RTA工艺之后在多晶硅有源层上形成硅氧化层，并形成 金属层覆盖在硅氧化层上。