SELF-ALIGNED WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS
    1.
    发明申请
    SELF-ALIGNED WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS 有权
    低噪声化学传感器的自对准结构

    公开(公告)号:US20140209982A1

    公开(公告)日:2014-07-31

    申请号:US13751575

    申请日:2013-01-28

    CPC classification number: G01N27/4145 G01N27/414 G01N27/4148

    Abstract: In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.

    Abstract translation: 在一个实施方式中,描述了化学检测装置。 该器件包括化学敏感的场效应晶体管,其包括耦合到栅极电介质并具有上表面的浮动栅极导体和在上表面上的感测材料。 该装置还包括填充材料,其限定在感测材料上方延伸的反应区域,反应区域覆盖并基本上与浮动栅极导体对准。

    SELF-ALIGNED WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS
    2.
    发明申请
    SELF-ALIGNED WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS 审中-公开
    低噪声化学传感器的自对准结构

    公开(公告)号:US20150168345A1

    公开(公告)日:2015-06-18

    申请号:US14628913

    申请日:2015-02-23

    CPC classification number: G01N27/4145 G01N27/414 G01N27/4148

    Abstract: In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.

    Abstract translation: 在一个实施方式中,描述了化学检测装置。 该器件包括化学敏感的场效应晶体管,其包括耦合到栅极电介质并具有上表面的浮动栅极导体和在上表面上的感测材料。 该装置还包括填充材料,其限定在感测材料上方延伸的反应区域,反应区域覆盖并基本上与浮动栅极导体对准。

Patent Agency Ranking