CHEMICAL SENSORS WITH CONSISTENT SENSOR SURFACE AREAS
    3.
    发明申请
    CHEMICAL SENSORS WITH CONSISTENT SENSOR SURFACE AREAS 有权
    化学传感器与一致的传感器表面区域

    公开(公告)号:US20140264470A1

    公开(公告)日:2014-09-18

    申请号:US14198382

    申请日:2014-03-05

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.

    Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口。 该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮动栅极导体的上表面并且沿着开口的侧壁延伸一定距离,该距离由第一电介质的厚度限定。

    Chemical Sensor with Consistent Sensor Surface Areas
    5.
    发明申请
    Chemical Sensor with Consistent Sensor Surface Areas 有权
    化学传感器具有一致的传感器表面区域

    公开(公告)号:US20160077045A1

    公开(公告)日:2016-03-17

    申请号:US14939101

    申请日:2015-11-12

    Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

    Abstract translation: 描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口,该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面并沿着开口的侧壁延伸一段距离。

    CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT
    6.
    发明申请
    CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT 审中-公开
    具有薄导电元件的化学器件

    公开(公告)号:US20140264471A1

    公开(公告)日:2014-09-18

    申请号:US14198402

    申请日:2014-03-05

    Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

    Abstract translation: 在一个实施方式中,描述了化学装置。 传感器包括化学敏感的场效应晶体管,其包括具有彼此电耦合的多个浮置栅极导体的浮动栅极结构。 导电元件覆盖并与多个浮置栅极导体中的最上面的浮动栅极导体连通。 导电元件比最上面的浮栅导体更宽和更薄。 介电材料限定了延伸到导电元件的上表面的开口。

    CHEMICAL SENSOR WITH CONDUCTIVE CUP-SHAPED SENSOR SURFACE
    7.
    发明申请
    CHEMICAL SENSOR WITH CONDUCTIVE CUP-SHAPED SENSOR SURFACE 审中-公开
    具有导电杯形传感器表面的化学传感器

    公开(公告)号:US20140220697A1

    公开(公告)日:2014-08-07

    申请号:US14260818

    申请日:2014-04-24

    CPC classification number: G01N27/4145 C12Q1/6869 G01N27/414 Y10T436/143333

    Abstract: A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.

    Abstract translation: 一种系统包括传感器,其包括传感器垫和井壁结构,其限定了良好地操作地耦合到传感器垫的结构。 该井由设置在传感器垫上的下表面进一步限定。 井壁结构限定了上表面并且限定了在上表面和下表面之间延伸的壁表面。 该系统还包括设置在下表面和壁表面上的导电层。

    METHODS FOR MANUFACTURING WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS
    8.
    发明申请
    METHODS FOR MANUFACTURING WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS 有权
    用于制造低噪声化学传感器的良好结构的方法

    公开(公告)号:US20140191293A1

    公开(公告)日:2014-07-10

    申请号:US13736566

    申请日:2013-01-08

    CPC classification number: G01N27/414 G01N27/4145 G01N27/4148

    Abstract: In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

    Abstract translation: 在一个实施方式中,描述了用于制造化学检测装置的方法。 该方法包括形成具有感测表面的化学传感器。 电介质材料沉积在感测表面上。 执行第一蚀刻工艺以部分地蚀刻介电材料以在感测表面上限定开口,并将剩余的电介质材料留在感测表面上。 蚀刻保护材料形成在开口的侧壁上。 然后执行第二蚀刻工艺以使用蚀刻保护材料作为蚀刻掩模来选择性地蚀刻剩余的电介质材料,从而暴露感测表面。

    METHODS FOR MANUFACTURING WELL STRUCTURES FOR LOW-NOISE CHEMICAL SENSORS

    公开(公告)号:US20180217091A1

    公开(公告)日:2018-08-02

    申请号:US15826627

    申请日:2017-11-29

    CPC classification number: G01N27/414 G01N27/4145 G01N27/4148

    Abstract: In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

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