公开(公告)号：US20170278739A1

公开(公告)日：2017-09-28

申请号：US15466369

申请日：2017-03-22

Applicant: LINTEC Corporation

Inventor： Takashi AKUTSU ,  Takuo NISHIDA

IPC: H01L21/683 ,  B32B27/06 ,  B32B7/12 ,  C09J7/02 ,  C09J133/08

CPC classification number: H01L21/6836 ,  B32B7/06 ,  B32B7/12 ,  B32B23/08 ,  B32B25/08 ,  B32B27/06 ,  B32B27/08 ,  B32B27/16 ,  B32B27/286 ,  B32B27/302 ,  B32B27/304 ,  B32B27/308 ,  B32B27/32 ,  B32B27/325 ,  B32B27/36 ,  B32B27/365 ,  B32B27/40 ,  B32B2250/02 ,  B32B2250/24 ,  B32B2255/10 ,  B32B2255/26 ,  B32B2255/28 ,  B32B2307/732 ,  B32B2307/748 ,  B32B2457/14 ,  C08L33/08 ,  C09J5/00 ,  C09J7/22 ,  C09J7/38 ,  C09J133/064 ,  C09J133/08 ,  C09J133/26 ,  C09J2201/606 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2205/302 ,  C09J2205/31 ,  C09J2433/00 ,  H01L2221/68327 ,  H01L2221/6834

Abstract: The semiconductor processing sheet of the present invention is a semiconductor processing sheet including a base material and a pressure sensitive adhesive layer provided on one surface of the base material, wherein the pressure sensitive adhesive layer contains an acrylic polymer (A) having a molecular weight distribution of 3.0 or less and an acrylic polymer (B) having a molecular weight distribution of more than 3.0; and a gel fraction of the pressure sensitive adhesive layer is 50 to 70%, and a number average molecular weight of a sol content thereof is 60,000 or more.

公开(公告)号：US20180286736A1

公开(公告)日：2018-10-04

申请号：US15764377

申请日：2016-03-28

Applicant: LINTEC CORPORATION

Inventor： Yasuhiko KAKIUCHI ,  Takashi AKUTSU ,  Sayaka BANDOU ,  Yuichiro KOMASU

IPC: H01L21/683 ,  C09J7/38 ,  C09J7/20

Abstract: The sheet for semiconductor processing of the present invention includes a base, an unevenness-absorbing layer provided on one surface of the base, and a pressure sensitive adhesive layer provided on the unevenness-absorbing layer, wherein the pressure sensitive adhesive layer is composed of an energy ray-curable pressure sensitive adhesive, and a stress at rupture of the pressure sensitive adhesive layer after energy ray curing is 10 MPa or more.