公开(公告)号：US11688763B2

公开(公告)日：2023-06-27

申请号：US16950420

申请日：2020-11-17

申请人： Littelfuse, Inc.

发明人： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC分类号： H01L29/06 ,  H01L21/74 ,  H01L21/76 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/763 ,  H01L21/768 ,  H01L23/535 ,  H01L29/861

CPC分类号： H01L29/0642 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/32055 ,  H01L21/743 ,  H01L21/76 ,  H01L21/763 ,  H01L21/76877 ,  H01L23/535 ,  H01L29/8611

摘要： A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US20170373142A1

公开(公告)日：2017-12-28

申请号：US15190469

申请日：2016-06-23

申请人： Littelfuse, Inc.

发明人： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC分类号： H01L29/06 ,  H01L21/768 ,  H01L21/763 ,  H01L21/324 ,  H01L21/3205 ,  H01L23/535 ,  H01L21/306

摘要： A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US20210091178A1

公开(公告)日：2021-03-25

申请号：US16950420

申请日：2020-11-17

申请人： Littelfuse, Inc.

发明人： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC分类号： H01L29/06 ,  H01L21/74 ,  H01L21/76 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/763 ,  H01L21/768 ,  H01L23/535

摘要： A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US10943975B2

公开(公告)日：2021-03-09

申请号：US16457500

申请日：2019-06-28

申请人： Littelfuse, Inc.

发明人： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC分类号： H01L21/74 ,  H01L29/06 ,  H01L21/76 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/763 ,  H01L21/768 ,  H01L23/535 ,  H01L29/861

摘要： A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US20190326390A1

公开(公告)日：2019-10-24

申请号：US16457500

申请日：2019-06-28

申请人： Littelfuse, Inc.

发明人： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC分类号： H01L29/06 ,  H01L21/306 ,  H01L23/535 ,  H01L21/76 ,  H01L21/324 ,  H01L21/74 ,  H01L21/763 ,  H01L21/768 ,  H01L21/3205

摘要： A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US10074642B2

公开(公告)日：2018-09-11

申请号：US14407264

申请日：2013-07-03

申请人： LITTELFUSE, INC.

发明人： Ader Shen ,  Ethan Kuo ,  Ting-Fung Chang

IPC分类号： H01L27/02 ,  H02H9/04 ,  H02H9/00

CPC分类号： H01L27/0248 ,  H01L27/0255 ,  H01L27/0262 ,  H02H9/005 ,  H02H9/04 ,  H02H9/043 ,  H02H9/044

摘要： A circuit protection component including a crowbar device for protecting electronic devices from transients is generally disclosed. The circuit protection component may include a steering diode bridge and a crowbar device electrically connected to the steering diode bridge. The crowbar device may have a base and an emitter formed on a first layer, the first layer defining a breakdown voltage, which when exceeded allows current to pass under the emitter and out the device through a hole formed in the emitter.