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    Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
    1.
    发明授权
    Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique 失效
    压力和温度控制装置，通过切克劳斯基技术大规模生产晶体

    公开(公告)号：US3865554A

    公开(公告)日：1975-02-11

    申请号：US18316971

    申请日：1971-09-23

    Applicant: LITTLE INC A

    Inventor： WENCKUS JOSEPH F ,  CASTONGUAY ROGER A ,  HANFLY BERNARD C ,  MALLAHAN FRANCIS J

    IPC: C30B15/00 ,  C30B15/30 ,  B01J17/18

    CPC classification number: C30B15/30 ,  Y10T117/1008 ,  Y10T117/1072

    Abstract: Furnace assembly providing a working volume the pressure in which may range from 10 5 torr to 135 atmospheres. Controlled temperatures up to 3,000*C are attainable. A crystal-pulling rod and a crucible-supporting rod extend into the furnace. The crystal-pulling rod is rotated and driven translationally through an extended excursion in a slow crystal-pulling mode and relatively fast positioning mode; while the crucible support rod is rotated and driven translationally through a relatively short excursion in a crucible positioning mode. The main furnace housing is lifted up and swung away to permit ready access to the crucible holding zone for interchange of rf coils and crucible holders as well as for easy safe removal of large crystals suspended from the pulling rod. Means are provided continuously to indicate the precise position of the crystal-pulling rod, to monitor the operation within the furnace by TV, and to control the operations within the furnace from a remote location.

    Abstract translation: 炉组件提供工作容积的压力，其范围可以在10 -5托到135个大气压的范围内。 可控温度可达3000℃。 拉杆和坩埚支撑杆延伸到炉中。 拉晶杆在慢速拉晶模式和相对快速的定位模式下通过延伸的偏移而平移地驱动和驱动; 而坩埚支撑杆在坩埚定位模式中通过相对较短的偏移而平移地旋转和驱动。 主炉壳体被提起并摆放，以允许准备进入坩埚保持区域，以便互换rf线圈和坩埚保持器，并且易于安全地从悬挂在拉杆上的大晶体去除。 提供连续的装置以指示拉杆的精确位置，通过TV监视炉内的操作，并从远程位置控制炉内的操作。

    Method of synthesizing intermetallic compounds
    2.
    发明授权
    Method of synthesizing intermetallic compounds 失效
    合成化合物的方法

    公开(公告)号：US3704093A

    公开(公告)日：1972-11-28

    申请号：US3704093D

    申请日：1970-06-15

    Applicant: LITTLE INC A

    Inventor： HAGGERTY JOHN S ,  WENCKUS JOSEPH F

    IPC: C01B25/06 ,  C22C1/00 ,  C22C1/02 ,  C01G15/00 ,  C01B17/00

    CPC classification number: C01B25/06 ,  C22C1/007 ,  C22C1/02 ,  Y10S148/022 ,  Y10S148/064 ,  Y10S148/065

    Abstract: METHOD OF FORMING INTERMETALLIC COMPOUNDS AND THE LIKE, PARTICULARLY GROUP III-V AND GROUP II-VI COMPOUNDS. THE REACTANTS ARE PLACED IN A CRUCIBLE AND COVERED WITH AN ENCAPSULANT WHICH IS CAUSED TO FLOW THROUGH AND OVER THE REACTANTS TO SEAL THE SYSTEM PRIOR TO THE TIME THAT A TEMPERATURE IS REACHED WHEN THE VAPOR PRESSURE OF ONE OR MORE OF THE REACTANTS BECOMES APPRECIABLE. A TEMPERATURE GRADIENT MAY BE ESTABLISHED ALONG THE VERTICAL AXIS OF THE CRUCIBLE DURING THE SEALING PERIOD. WHEN THE SYSTEM IS SEALED THE OVERPRESSURE IS RAISED AND THE TEMPERATURE IS INCREASED TO A LEVEL AT WHICH THE REACTION IS COMPLETED. NONCONDENSABLES SUCH AS NITROGEN MAY ALSO BE USED AS REACTANTS.

    D R A W I N G

    Apparatus for growing crystals in plate form
    3.
    发明授权
    Apparatus for growing crystals in plate form 失效
    用于在板上形成晶体的装置

    公开(公告)号：US3697228A

    公开(公告)日：1972-10-10

    申请号：US3697228D

    申请日：1969-02-07

    Applicant: LITTLE INC A

    Inventor： WENCKUS JOSEPH F

    IPC: C30B11/10 ,  B01J17/24

    CPC classification number: C30B11/10 ,  Y10T117/1028

    Abstract: APPARATUS FOR GROWING CRYSTALS OF SUCH MATERIALS AS SAPPHIRE, RUBY, SPINEL AND THE LIKE IN STRIP OF PLATE FORM BY THE VERNEUIL METHOD. A PLURALITY OF SPACED POWDER FEED TUBES, HAVING MEANS SURROUNDING EACH ONE TO SUPPLY A COMBUSTIBLE MIXTURE, ARE POSITIONED TO DIRECT FUSED

    PARTICLES ONTO A BOULE TO BUILD UP THE CRYSTAL IN AN EVEN CONTINUOUS GROWTH PATTERN.

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