公开(公告)号：US12230495B2

公开(公告)日：2025-02-18

申请号：US17285814

申请日：2019-10-11

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Shane Tang ,  Vikrant Rai ,  Andrew McKerrow ,  Huatan Qiu

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.