公开(公告)号：US12230495B2

公开(公告)日：2025-02-18

申请号：US17285814

申请日：2019-10-11

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Shane Tang ,  Vikrant Rai ,  Andrew McKerrow ,  Huatan Qiu

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.

公开(公告)号：US10020188B2

公开(公告)日：2018-07-10

申请号：US15817579

申请日：2017-11-20

Applicant: LAM RESEARCH CORPORATION

Inventor： James S. Sims ,  Jon Henri ,  Ramesh Chandrasekharan ,  Andrew John McKerrow ,  Seshasayee Varadarajan ,  Kathryn Merced Kelchner

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/34 ,  C23C16/02

CPC classification number: H01L21/0228 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.

公开(公告)号：US09214333B1

公开(公告)日：2015-12-15

申请号：US14494914

申请日：2014-09-24

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Kathryn M. Kelchner ,  Jon Henri ,  Dennis M. Hausmann

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/0234

Abstract: Disclosed herein are methods of depositing a SiN film having a reduced wet etch rate. The methods may include adsorbing a film precursor comprising Si onto a semiconductor substrate in a processing chamber to form an adsorption-limited layer of precursor, and then removing unadsorbed precursor from the volume surrounding the adsorbed precursor. The adsorbed precursor may then be reacted by exposing it to a plasma comprising N-containing ions and/or radicals to form a SiN film layer on the substrate, and the SiN film layer may then be densified by exposing it to a He plasma. The foregoing steps may then be repeated to form another densified SiN film layer on the substrate. Also disclosed herein are apparatuses for depositing SiN films having reduced wet etch rates on semiconductor substrates which employ the foregoing techniques.

Abstract translation: 本文公开了沉积具有降低的湿蚀刻速率的SiN膜的方法。 所述方法可以包括在处理室中将包含Si的膜前体吸附到半导体衬底上以形成前体的吸附限制层，然后从包围吸附的前体的体积中除去未吸附的前体。 然后可以通过将吸附的前体暴露于含有N的离子和/或自由基的等离子体以在衬底上形成SiN膜层而使其吸收的前体发生反应，然后可以通过将SiN膜层暴露于He等离子体来致密化SiN膜层。 然后可以重复上述步骤以在衬底上形成另一致密的SiN膜层。 本文还公开了用于在采用上述技术的半导体衬底上沉积具有降低的湿蚀刻速率的SiN膜的装置。

公开(公告)号：US09589790B2

公开(公告)日：2017-03-07

申请号：US14552245

申请日：2014-11-24

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Shane Tang ,  James S. Sims

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40

CPC classification number: H01L21/0217 ,  C23C16/303 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45542 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.

Abstract translation: 本文提供了通过暴露于无卤素，不含N-H键的无碳氧化硅和前体如乙硅烷，使用原子层沉积来沉积共形氮化硅膜的方法，清洗前体，暴露于 氮等离子体，以及在低温下清除等离子体。 使用高频等离子体，例如频率至少为13.56MHz或至少27MHz的等离子体。 方法产生适合于在半导体器件中沉积的基本上纯的共形氮化硅膜，例如在沟槽或特征中，或用于存储器封装。

公开(公告)号：US20160148806A1

公开(公告)日：2016-05-26

申请号：US14552245

申请日：2014-11-24

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Shane Tang ,  James S. Sims

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/303 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45542 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation.

Abstract translation: 本文提供了通过暴露于无卤素，不含N-H键的无碳氧化硅和前体如乙硅烷，使用原子层沉积来沉积共形氮化硅膜的方法，清洗前体，暴露于 氮等离子体，以及在低温下清除等离子体。 使用高频等离子体，例如频率至少为13.56MHz或至少27MHz的等离子体。 方法产生适合于在半导体器件中沉积的基本上纯的共形氮化硅膜，例如在沟槽或特征中，或用于存储器封装。

公开(公告)号：US09076646B2

公开(公告)日：2015-07-07

申请号：US14144107

申请日：2013-12-30

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Jon Henri ,  Kathryn M. Kelchner ,  Sathish Babu S. V. Janjam ,  Shane Tang

IPC: H01L21/02 ,  C23C16/515 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/515 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76829

Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.

Abstract translation: 本文的实施例集中于使用脉冲等离子体的等离子体增强原子层沉积（PEALD）工艺。 虽然常规PEALD工艺在等离子体曝光/转换操作期间使用连续波等离子体，但是本文的实施例在此操作期间利用脉冲等离子体来实现具有高质量侧壁的膜。 因为传统的PEALD技术导致在特征的底部和顶部具有高质量的膜，而在侧壁上具有低质量，因此在所公开的方法中增加的侧壁质量对应于整体上在质量上更均匀的膜， 常规连续波等离子体技术。

公开(公告)号：US20180102245A1

公开(公告)日：2018-04-12

申请号：US15817579

申请日：2017-11-20

Applicant: LAM RESEARCH CORPORATION

Inventor： James S. Sims ,  Jon Henri ,  Ramesh Chandrasekharan ,  Andrew John McKerrow ,  Seshasayee Varadarajan ,  Kathryn Merced Kelchner

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.

公开(公告)号：US09824884B1

公开(公告)日：2017-11-21

申请号：US15287176

申请日：2016-10-06

Applicant: LAM RESEARCH CORPORATION

Inventor： James S. Sims ,  Jon Henri ,  Ramesh Chandrasekharan ,  Andrew John McKerrow ,  Seshasayee Varadarajan ,  Kathryn Merced Kelchner

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/0228 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.

公开(公告)号：US20140113457A1

公开(公告)日：2014-04-24

申请号：US14144107

申请日：2013-12-30

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Jon Henri ,  Kathryn M. Kelchner ,  Sathish Babu S. V. Janjam ,  Shane Tang

IPC: H01L21/02 ,  C23C16/515

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/515 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76829

Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.

Abstract translation: 本文的实施例集中于使用脉冲等离子体的等离子体增强原子层沉积（PEALD）工艺。 虽然常规PEALD工艺在等离子体曝光/转换操作期间使用连续波等离子体，但是本文的实施例在此操作期间利用脉冲等离子体来实现具有高质量侧壁的膜。 因为常规的PEALD技术导致在特征的底部和顶部具有高质量但在侧壁上质量较差的膜，因此在所公开的方法中增加的侧壁质量对应于整体上在质量上更均匀的膜， 常规连续波等离子体技术。