公开(公告)号：US20230383401A1

公开(公告)日：2023-11-30

申请号：US18447199

申请日：2023-08-09

Applicant: Lam Research Corporation

Inventor： Fengyuan LAI ,  Bo GONG ,  Guangbi YUAN ,  Chen-Hua HSU ,  Bhadri VARADARAJAN

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/505 ,  H01L21/02

CPC classification number: C23C16/401 ,  C23C16/4404 ,  H01J37/32522 ,  C23C16/505 ,  H01L21/0262 ,  C23C16/45536

Abstract: In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

公开(公告)号：US20220275504A1

公开(公告)日：2022-09-01

申请号：US17663614

申请日：2022-05-16

Applicant: Lam Research Corporation

Inventor： Damodar Rajaram SHANBHAG ,  Guangbi YUAN ,  Thadeous BAMFORD ,  Curtis Warren BAILEY ,  Tony KAUSHAL ,  Krishna BIRRU ,  William SCHLOSSER ,  Bo GONG ,  Huatan QIU ,  Fengyuan LAI ,  Leonard Wai Fung KHO ,  Anand CHANDRASHEKAR ,  Andrew H. BRENINGER ,  Chen-Hua HSU ,  Geoffrey HOHN ,  Gang LIU ,  Rohit KHARE

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/40

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US20230002891A1

公开(公告)日：2023-01-05

申请号：US17930397

申请日：2022-09-07

Applicant: Lam Research Corporation

Inventor： Damodar Rajaram SHANBHAG ,  Guangbi YUAN ,  Thadeous BAMFORD ,  Curtis Warren BAILEY ,  Tony KAUSHAL ,  Krishna BIRRU ,  William SCHLOSSER ,  Bo GONG ,  Huatan QIU ,  Fengyuan LAI ,  Leonard Wai Fung KHO ,  Anand CHANDRASHEKAR ,  Andrew H. BRENINGER ,  Chen-Hua HSU ,  Geoffrey HOHN ,  Gang LIU ,  Rohit KHARE

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/40

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.