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公开(公告)号:US20230360894A1
公开(公告)日:2023-11-09
申请号:US18006531
申请日:2021-07-23
Applicant: Lam Research Corporation
Inventor: Gabriel Pioux , Allan Ronne
IPC: H01J37/32
CPC classification number: H01J37/32834 , H01J37/32715 , H01J37/32183
Abstract: A semiconductor processing chamber performs various wafer processing operations that involve at least one of pumping the chamber to high vacuum states and regulating a vacuum (e.g., during introduction of process gases, as gas infiltrates the chamber, as reactions emit gases, as a wafer off-gases, etc.). A vacuum valve may be fluidically coupled between a vacuum pumping system and at least a portion of the semiconductor processing chamber. The vacuum valve may be a high-conductance multi-stage poppet valve enabling a relatively high gas flow rate and/or low pressure drop. In an open state, the multi-stage design of the poppet valve may have larger cross-sectional openings, in aggregate, than a comparable single-stage poppet valve could achieve, thereby increasing conductance.
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公开(公告)号:US20230253189A1
公开(公告)日:2023-08-10
申请号:US18013737
申请日:2021-06-30
Applicant: Lam Research Corporation
Inventor: Hui Ling Han , Michael Julius Kinsler , Steven James Madsen , Gabriel Pioux
IPC: H01J37/32
CPC classification number: H01J37/32513 , H01J2237/334
Abstract: In some examples, a double seal arrangement for a substrate processing chamber comprises a radially inner barrier seal disposed within a barrier seal gland. The barrier seal gland includes an inner toe and an outer toe. A radially outer vacuum seal is disposed within a vacuum seal gland. The vacuum seal gland includes at least an inner toe. A first venting pathway is provided between the inner toe of the vacuum seal gland and the outer toe of the barrier seal gland, and a second venting pathway is provided between the outer toe of the barrier seal gland and the inner toe of the barrier seal gland. A third venting pathway is in communication at least with the inner toe of the barrier seal gland, and a vacuum source connected to at least one of the first, second, and third venting pathways.
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