公开(公告)号：US10741440B2

公开(公告)日：2020-08-11

申请号：US16000457

申请日：2018-06-05

Applicant: Lam Research Corporation

Inventor： Yezdi N. Dordi ,  Aniruddha Joi ,  Steven James Madsen ,  Dries Dictus

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/67 ,  H01L21/762 ,  H01L21/321 ,  C25D3/12 ,  C25D3/38

Abstract: A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.

公开(公告)号：US20230253189A1

公开(公告)日：2023-08-10

申请号：US18013737

申请日：2021-06-30

Applicant: Lam Research Corporation

Inventor： Hui Ling Han ,  Michael Julius Kinsler ,  Steven James Madsen ,  Gabriel Pioux

IPC: H01J37/32

CPC classification number: H01J37/32513 ,  H01J2237/334

Abstract: In some examples, a double seal arrangement for a substrate processing chamber comprises a radially inner barrier seal disposed within a barrier seal gland. The barrier seal gland includes an inner toe and an outer toe. A radially outer vacuum seal is disposed within a vacuum seal gland. The vacuum seal gland includes at least an inner toe. A first venting pathway is provided between the inner toe of the vacuum seal gland and the outer toe of the barrier seal gland, and a second venting pathway is provided between the outer toe of the barrier seal gland and the inner toe of the barrier seal gland. A third venting pathway is in communication at least with the inner toe of the barrier seal gland, and a vacuum source connected to at least one of the first, second, and third venting pathways.

公开(公告)号：US11424158B2

公开(公告)日：2022-08-23

申请号：US16984882

申请日：2020-08-04

Applicant: Lam Research Corporation

Inventor： Yezdi N. Dordi ,  Aniruddha Joi ,  Steven James Madsen ,  Dries Dictus

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/67 ,  H01L21/762 ,  H01L21/321 ,  C25D3/12 ,  C25D3/38

Abstract: A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.