公开(公告)号：US11837441B2

公开(公告)日：2023-12-05

申请号：US17595505

申请日：2020-05-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20240234091A9

公开(公告)日：2024-07-11

申请号：US18493614

申请日：2023-10-24

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20240136153A1

公开(公告)日：2024-04-25

申请号：US18493614

申请日：2023-10-23

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20220216037A1

公开(公告)日：2022-07-07

申请号：US17595505

申请日：2020-05-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  H01L21/027 ,  C23C16/517 ,  C23C16/52 ,  H01L21/311 ,  H01L21/3213

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.