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    MICROWAVE PLASMA REACTORS
    7.
    发明申请
    MICROWAVE PLASMA REACTORS 有权
    微波等离子体反应器

    公开(公告)号：US20140220261A1

    公开(公告)日：2014-08-07

    申请号：US14117213

    申请日：2012-05-11

    Applicant: Jes Asmussen ,  Yajun Gu ,  Timothy A. Grotjohn

    Inventor： Jes Asmussen ,  Yajun Gu ,  Timothy A. Grotjohn

    IPC: C23C16/517 ,  H01J37/32 ,  C30B25/10

    CPC classification number: C23C16/517 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J37/32807 ,  H01J2237/32

    Abstract: Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.

    Abstract translation: 公开了微波等离子体辅助反应器，例如化学气相沉积（MPCVD）反应器。 所公开的反应器在高压（> 180-320乇）和高功率密度（> 150W / cm 3）下工作，从而实现快速沉积材料的高沉积速率CVD工艺。 特别地，描述了反应器设计实例，当在180-320乇压力范围内操作时，快速CVD合成高质量多晶（PCD）和单晶金刚石（SCD）。 改进的反应器包括在主微波室中等离子体室附近的径向收缩（以及可选地在电磁波源附近的组合膨胀，随后是收缩），因为电磁能量从电磁波源传播到 等离子体/沉积室。

    DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS
    8.
    发明申请
    DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS 有权
    金刚石生产方法和直流等离子体增强CVD装置

    公开(公告)号：US20140041574A1

    公开(公告)日：2014-02-13

    申请号：US13954669

    申请日：2013-07-30

    Applicant: Shin-Estu Chemical Co., Ltd.

    Inventor： Hitoshi NOGUCHI

    IPC: C30B25/16

    CPC classification number: C30B25/16 ,  C23C16/27 ,  C23C16/272 ,  C23C16/515 ,  C23C16/517 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B25/183 ,  C30B29/04 ,  H01J37/32027 ,  H01J37/32926 ,  H01J2237/327 ,  H01J2237/3321

    Abstract: Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.

    Abstract translation: 通过在用于保持基板（S）的载台电极（12）和用于保持基板（S）的直流电压之间施加DC电压的DC等离子体增强CVD工艺，在含碳气体和氢气的混合物的基板（S）上生长金刚石 施加电压（13）。 在通过施加直流电压生长金刚石的步骤中，在预定的时刻在级电极和施加电极之间施加与用于金刚石生长的直流电压相反极性的单个脉冲电压。 质量钻石以稳定的增长率生产。

    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER
    9.
    发明申请
    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER 审中-公开
    双等离子体源，灯加热等离子体室

    公开(公告)号：US20120222618A1

    公开(公告)日：2012-09-06

    申请号：US13193453

    申请日：2011-07-28

    Applicant: Christopher Olsen ,  Canfeng Lai ,  Sundar Ramamurthy ,  Johanes S. Swenberg ,  Wei Liu

    Inventor： Christopher Olsen ,  Canfeng Lai ,  Sundar Ramamurthy ,  Johanes S. Swenberg ,  Wei Liu

    IPC: C23C16/50 ,  C23C16/505 ,  C23C16/511

    CPC classification number: C23C16/517 ,  H01J37/32082 ,  H01J37/32357

    Abstract: Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.

    Abstract translation: 描述了用于处理半导体衬底的方法和设备。 处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开 除了基板支撑。 支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。 一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时 将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。

    METHOD AND APPARATUS FOR MULTIZONE PLASMA GENERATION
    10.
    发明申请
    METHOD AND APPARATUS FOR MULTIZONE PLASMA GENERATION 有权
    多重等离子体生成的方法和装置

    公开(公告)号：US20120208371A1

    公开(公告)日：2012-08-16

    申请号：US13192870

    申请日：2011-07-28

    Applicant: MATTHEW SCOTT ROGERS ,  Zhong Qiang Hua ,  Christopher S. Olsen

    Inventor： MATTHEW SCOTT ROGERS ,  Zhong Qiang Hua ,  Christopher S. Olsen

    IPC: H01L21/302 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505 ,  C23C16/455

    CPC classification number: C23C16/513 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/505 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244

    Abstract: Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure. The resulting process and apparatus enables tailoring of the ion to radical ratio to allow better control of forming films on high aspect ratio features, and thus improve corner rounding, conformality of sidewall to bottom trench growth, and selective growth.

    Abstract translation: 本发明的实施例提供了一种方法和装置，用于通过在给定压力下控制离子与等离子体中的自由基的比例来等离子体处理衬底以在衬底上和其上设置的器件上形成膜。 可以保持给定的压力以促进使用一个等离子体源的离子产生，并且可以使用第二等离子体源来提供额外的自由基。 在一个实施例中，在其中定位有基板的处理区域中产生低压等离子体，并且在分离的区域中产生高压等离子体。 将来自高压等离子体的自由基注入到具有低压等离子体的处理区域中，从而在给定的操作压力下改变自由基对离子的自然分布。 所得到的方法和装置能够定制离子与自由基比例，以便更好地控制高纵横比特征上的成膜，从而改善角落圆化，侧壁到底部沟槽生长的共形性以及选择性生长。

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