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    High selectivity and low stress carbon hardmask by pulsed low frequency RF power
    5.
    发明授权
    High selectivity and low stress carbon hardmask by pulsed low frequency RF power 有权
    高选择性和低应力碳硬掩模通过脉冲低频RF功率

    公开(公告)号：US09589799B2

    公开(公告)日：2017-03-07

    申请号：US14248046

    申请日：2014-04-08

    Applicant: Lam Research Corporation

    Inventor： Sirish K. Reddy ,  Chunhai Ji ,  Xinyi Chen ,  Pramod Subramonium

    IPC: H01L21/02 ,  H01L21/033 ,  C23C16/505 ,  C23C16/515

    CPC classification number: H01L21/0332 ,  C23C16/505 ,  C23C16/515 ,  H01L21/02115 ,  H01L21/02274

    Abstract: Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.

    Abstract translation: 提供了使用等离子体增强化学气相沉积形成高蚀刻选择性的低应力可吸收硬掩模的方法。 在某些实施例中，所述方法包括在使用双射频等离子体源沉积可灰化硬掩模的过程中脉冲低频射频功率同时保持高频射频功率恒定。 根据各种实施例，低频射频功率可以在非零电平之间进行脉冲，或通过切换电源接通和断开。 所产生的沉积的高度选择性的可硬化硬掩模可能由于一个或多个因素而具有降低的应力，包括降低的可吸收硬掩模上的离子和原子撞击，以及在可灰化硬掩模中捕获的较低水平的氢。

    CLEANING OF CARBON-BASED CONTAMINANTS IN METAL INTERCONNECTS FOR INTERCONNECT CAPPING APPLICATIONS
    6.
    发明申请
    CLEANING OF CARBON-BASED CONTAMINANTS IN METAL INTERCONNECTS FOR INTERCONNECT CAPPING APPLICATIONS 审中-公开
    用于互连接头应用的金属互连中碳基污染物的清洁

    公开(公告)号：US20150380296A1

    公开(公告)日：2015-12-31

    申请号：US14314479

    申请日：2014-06-25

    Applicant: Lam Research Corporation

    Inventor： George Andrew Antonelli ,  Thomas Joseph Knisley ,  Pramod Subramonium

    IPC: H01L21/768 ,  C23C16/02 ,  C23C16/52

    CPC classification number: C23C16/0227 ,  C23C16/16 ,  H01L21/02074 ,  H01L21/28556 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883

    Abstract: Protective caps residing at an interface between copper lines and dielectric diffusion barrier layers are used to improve various performance characteristics of interconnects. The caps, such as cobalt-containing caps or manganese-containing caps, are selectively deposited onto exposed copper lines in a presence of exposed dielectric using CVD or ALD methods. The deposition of the capping material is affected by the presence of carbon-containing contaminants on the surface of copper, which may lead to poor or uneven growth of the capping layer. A method of removing carbon-containing contaminants from the copper surface prior to deposition of caps involves contacting the substrate containing the exposed copper surface with a silylating agent at a first temperature to form a layer of reacted silylating agent on the copper surface, followed by heating the substrate at a higher temperature to release the reacted silylating agent from the copper surface.

    Abstract translation: 使用驻留在铜线和电介质扩散阻挡层之间的界面处的保护盖来改善互连的各种性能特征。 在使用CVD或ALD方法的暴露的电介质的存在下，将诸如含钴帽或含锰帽的帽选择性地沉积到暴露的铜线上。 封盖材料的沉积受铜表面上含碳污染物的存在的影响，这可能导致封盖层的生长不良或不均匀。 在沉积帽子之前从铜表面除去含碳污染物的方法包括在第一温度下将含有暴露的铜表面的基材与甲硅烷基化剂接触，以在铜表面上形成一层反应的甲硅烷基化试剂，然后加热 该基底在较高温度下从铜表面释放反应的甲硅烷基化剂。

    Methods and apparatus for selective deposition of cobalt in semiconductor processing
    7.
    发明授权
    Methods and apparatus for selective deposition of cobalt in semiconductor processing 有权
    在半导体加工中选择性沉积钴的方法和设备

    公开(公告)号：US09153482B2

    公开(公告)日：2015-10-06

    申请号：US14171483

    申请日：2014-02-03

    Applicant: Lam Research Corporation

    Inventor： Thomas Joseph Knisley ,  Nagraj Shankar ,  Pramod Subramonium

    IPC: H01L21/44 ,  H01L21/302 ,  H01L21/461 ,  H01L21/768 ,  H01L23/532 ,  H01L21/268 ,  C23C16/18 ,  C23C16/04

    CPC classification number: C23C16/04 ,  C23C16/0209 ,  C23C16/0263 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods and apparatus for selective deposition of cobalt on copper lines in the presence of exposed dielectric in semiconductor processing are provided. Cobalt in its metallic form is selectively deposited onto copper in the presence of dielectric by contacting a prepared surface of the substrate with an organometallic cobalt compound in a presence of a reducing agent. Surface preparation involves H2 treatment with concurrent UV light irradiation. After the substrate surface is prepared, the substrate is contacted with an organometallic cobalt compound comprising a substituted or unsubstituted allyl ligand in a presence of a reducing agent to selectively deposit cobalt on copper. No plasma treatment during or after cobalt deposition is necessary, and the method can be used in a presence of a ULK dielectric without causing damage to dielectric. Deposited cobalt caps are used to reduce copper electromigration and to improve adhesion of copper to subsequently deposited layers.

    Abstract translation: 提供了在半导体处理中在暴露的电介质存在下在铜线上选择性沉积钴的方法和装置。 通过在还原剂的存在下使基材的制备表面与有机金属钴化合物接触，将金属形式的钴选择性地沉积在铜上。 表面处理涉及同时进行紫外光照射的H2处理。 在制备基材表面之后，在还原剂存在下使基材与包含取代或未取代的烯丙基配体的有机金属钴化合物接触，以选择性地在铜上沉积钴。 在钴沉积期间或之后不需要等离子体处理，并且该方法可以在存在ULK电介质的情况下使用而不会损坏电介质。 沉积的钴盖用于减少铜电迁移并改善铜对随后沉积层的粘附。

    METHODS AND APPARATUS FOR SELECTIVE DEPOSITION OF COBALT IN SEMICONDUCTOR PROCESSING
    10.
    发明申请
    METHODS AND APPARATUS FOR SELECTIVE DEPOSITION OF COBALT IN SEMICONDUCTOR PROCESSING 有权
    在半导体加工中选择性沉积钴的方法和装置

    公开(公告)号：US20150221542A1

    公开(公告)日：2015-08-06

    申请号：US14171483

    申请日：2014-02-03

    Applicant: Lam Research Corporation

    Inventor： Thomas Joseph Knisley ,  Nagraj Shankar ,  Pramod Subramonium

    IPC: H01L21/768 ,  C23C16/04 ,  C23C16/18 ,  H01L23/532 ,  H01L21/268

    CPC classification number: C23C16/04 ,  C23C16/0209 ,  C23C16/0263 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods and apparatus for selective deposition of cobalt on copper lines in the presence of exposed dielectric in semiconductor processing are provided. Cobalt in its metallic form is selectively deposited onto copper in the presence of dielectric by contacting a prepared surface of the substrate with an organometallic cobalt compound in a presence of a reducing agent. Surface preparation involves H2 treatment with concurrent UV light irradiation. After the substrate surface is prepared, the substrate is contacted with an organometallic cobalt compound comprising a substituted or unsubstituted allyl ligand in a presence of a reducing agent to selectively deposit cobalt on copper. No plasma treatment during or after cobalt deposition is necessary, and the method can be used in a presence of a ULK dielectric without causing damage to dielectric. Deposited cobalt caps are used to reduce copper electromigration and to improve adhesion of copper to subsequently deposited layers.

    Abstract translation: 提供了在半导体处理中在暴露的电介质存在下在铜线上选择性沉积钴的方法和装置。 通过在还原剂的存在下使基材的制备表面与有机金属钴化合物接触，将金属形式的钴选择性地沉积在铜上。 表面处理涉及同时进行紫外光照射的H2处理。 在制备基材表面之后，在还原剂存在下使基材与包含取代或未取代的烯丙基配体的有机金属钴化合物接触，以选择性地在铜上沉积钴。 在钴沉积期间或之后不需要等离子体处理，并且该方法可以在存在ULK电介质的情况下使用而不会损坏电介质。 沉积的钴盖用于减少铜电迁移并改善铜对随后沉积层的粘附。

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