公开(公告)号：US11332824B2

公开(公告)日：2022-05-17

申请号：US15263838

申请日：2016-09-13

申请人： Lam Research Corporation

发明人： Antonio Xavier ,  Steven Goza ,  Ramesh Chandrasekharan ,  Adrien LaVoie ,  Joseph Nesmith

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  C23C16/505

摘要： A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.

公开(公告)号：US12049698B2

公开(公告)日：2024-07-30

申请号：US17737121

申请日：2022-05-05

申请人： Lam Research Corporation

发明人： Antonio Xavier ,  Steven Goza ,  Ramesh Chandrasekharan ,  Adrien Lavoie ,  Joseph Nesmith

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02

CPC分类号： C23C16/4405 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228

摘要： A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.

公开(公告)号：US20180073137A1

公开(公告)日：2018-03-15

申请号：US15263838

申请日：2016-09-13

申请人： Lam Research Corporation

发明人： Antonio Xavier ,  Steven Goza ,  Ramesh Chandrasekharan ,  Adrien LaVoie ,  Joseph Nesmith

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02

CPC分类号： C23C16/4405 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228

摘要： A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing substrate treatment on the substrate in the processing chamber; evacuating reactants from the processing chamber using a pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.