ASSET MANAGEMENT INFRASTRUCTURE
    1.
    发明申请
    ASSET MANAGEMENT INFRASTRUCTURE 有权
    资产管理基础设施

    公开(公告)号:US20120126937A1

    公开(公告)日:2012-05-24

    申请号:US13296242

    申请日:2011-11-15

    IPC分类号: G08B29/00

    CPC分类号: G08B13/14 G06Q10/087

    摘要: Asset management for control of electric appliances comprises a keycode unit and an equipment unit embedded in an appliance. The keycode unit is located in a protected environment and relates to an asset management area. The equipment unit may store an appliance identification code. The keycode unit and the equipment unit may be in communication contact, whereby the equipment unit sends positioning coordinates to the keycode unit, and wherein the equipment unit is adapted to lock the appliance via the lock unit, in response to a lock signal that the equipment unit receives from the keycode unit, if the appliance moves outside the asset management area.

    摘要翻译: 用于控制电器的资产管理包括密码单元和嵌入在器具中的设备单元。 键码单元位于受保护的环境中,与资产管理区域有关。 设备单元可以存储设备标识码。 键码单元和设备单元可以是通信接触的,由此设备单元向键码单元发送定位坐标,并且其中设备单元适于经由锁定单元锁定设备,响应于锁定信号,设备 如果设备移动到资产管理区域外,则单元从密钥单元接收。

    Asset management infrastructure
    2.
    发明授权
    Asset management infrastructure 有权
    资产管理基础设施

    公开(公告)号:US08692649B2

    公开(公告)日:2014-04-08

    申请号:US13296242

    申请日:2011-11-15

    IPC分类号: H04Q9/00

    CPC分类号: G08B13/14 G06Q10/087

    摘要: Asset management for control of electric appliances comprises a keycode unit and an equipment unit embedded in an appliance. The keycode unit is located in a protected environment and relates to an asset management area. The equipment unit may store an appliance identification code. The keycode unit and the equipment unit may be in communication contact, whereby the equipment unit sends positioning coordinates to the keycode unit, and wherein the equipment unit is adapted to lock the appliance via the lock unit, in response to a lock signal that the equipment unit receives from the keycode unit, if the appliance moves outside the asset management area.

    摘要翻译: 用于控制电器的资产管理包括密码单元和嵌入在器具中的设备单元。 键码单元位于受保护的环境中,与资产管理区域有关。 设备单元可以存储设备标识码。 键码单元和设备单元可以是通信接触的,由此设备单元向键码单元发送定位坐标,并且其中设备单元适于经由锁定单元锁定设备,响应于锁定信号,设备 如果设备移动到资产管理区域外,则单元从密钥单元接收。

    Self-aligned nano-scale device with parallel plate electrodes
    6.
    发明授权
    Self-aligned nano-scale device with parallel plate electrodes 有权
    具有平行平板电极的自对准纳米级装置

    公开(公告)号:US08802990B2

    公开(公告)日:2014-08-12

    申请号:US13432037

    申请日:2012-03-28

    IPC分类号: H01B5/14 H01L21/76 H01L21/764

    CPC分类号: B81C1/00698 B81B2201/0292

    摘要: A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.

    摘要翻译: 连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分,第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。 使用非共形沉积工艺来形成导电层,该导电层在邻接的深沟槽部分内具有锥形几何形状,使得导电层不存在于邻接的深沟槽的底表面上。 形成间隙填充层以堵塞第一沟槽部分中的空间。 将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。 在去除间隙填充层的剩余部分之后,形成在导电板的锥形垂直部分之间具有小间隔距离的装置。

    SELF-ALIGNED NANO-SCALE DEVICE WITH PARALLEL PLATE ELECTRODES
    7.
    发明申请
    SELF-ALIGNED NANO-SCALE DEVICE WITH PARALLEL PLATE ELECTRODES 有权
    具有平行平板电极的自对准纳米尺度装置

    公开(公告)号:US20120189767A1

    公开(公告)日:2012-07-26

    申请号:US13432037

    申请日:2012-03-28

    IPC分类号: B05D5/12 B05D3/00

    CPC分类号: B81C1/00698 B81B2201/0292

    摘要: A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.

    摘要翻译: 连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分,第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。 使用非共形沉积工艺来形成导电层,该导电层在邻接的深沟槽部分内具有锥形几何形状,使得导电层不存在于邻接的深沟槽的底表面上。 形成间隙填充层以堵塞第一沟槽部分中的空间。 将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。 在去除间隙填充层的剩余部分之后,形成在导电板的锥形垂直部分之间具有小间隔距离的装置。

    SELF-ALIGNED NANO-SCALE DEVICE WITH PARALLEL PLATE ELECTRODES
    8.
    发明申请
    SELF-ALIGNED NANO-SCALE DEVICE WITH PARALLEL PLATE ELECTRODES 失效
    具有平行平板电极的自对准纳米尺度装置

    公开(公告)号:US20100319962A1

    公开(公告)日:2010-12-23

    申请号:US12488948

    申请日:2009-06-22

    IPC分类号: H01B5/14 B05D5/12

    CPC分类号: B81C1/00698 B81B2201/0292

    摘要: A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.

    摘要翻译: 连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分,第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。 使用非共形沉积工艺来形成导电层,该导电层在邻接的深沟槽部分内具有锥形几何形状,使得导电层不存在于邻接的深沟槽的底表面上。 形成间隙填充层以堵塞第一沟槽部分中的空间。 将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。 在去除间隙填充层的剩余部分之后,形成在导电板的锥形垂直部分之间具有小间隔距离的装置。

    Self-aligned nano-scale device with parallel plate electrodes
    9.
    发明授权
    Self-aligned nano-scale device with parallel plate electrodes 失效
    具有平行平板电极的自对准纳米级装置

    公开(公告)号:US08476530B2

    公开(公告)日:2013-07-02

    申请号:US12488948

    申请日:2009-06-22

    IPC分类号: H01B5/14

    CPC分类号: B81C1/00698 B81B2201/0292

    摘要: A contiguous deep trench includes a first trench portion having a constant width between a pair of first parallel sidewalls, second and third trench portions each having a greater width than the first trench portion and laterally connected to the first trench portion. A non-conformal deposition process is employed to form a conductive layer that has a tapered geometry within the contiguous deep trench portion such that the conductive layer is not present on bottom surfaces of the contiguous deep trench. A gap fill layer is formed to plug the space in the first trench portion. The conductive layer is patterned into two conductive plates each having a tapered vertical portion within the first trench portion. After removing remaining portions of the gap fill layer, a device is formed that has a small separation distance between the tapered vertical portions of the conductive plates.

    摘要翻译: 连续的深沟槽包括在一对第一平行侧壁之间具有恒定宽度的第一沟槽部分,第二沟槽部分和第三沟槽部分各自具有比第一沟槽部分更大的宽度并横向连接到第一沟槽部分。 使用非共形沉积工艺来形成导电层,该导电层在邻接的深沟槽部分内具有锥形几何形状,使得导电层不存在于邻接的深沟槽的底表面上。 形成间隙填充层以堵塞第一沟槽部分中的空间。 将导电层图案化为在第一沟槽部分内具有锥形垂直部分的两个导电板。 在去除间隙填充层的剩余部分之后,形成在导电板的锥形垂直部分之间具有小间隔距离的装置。