公开(公告)号：US20080241387A1

公开(公告)日：2008-10-02

申请号：US11693588

申请日：2007-03-29

Applicant: Leif R. Keto

Inventor： Leif R. Keto

IPC: C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45565 ,  H01J37/3244

Abstract: Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. The reactor according to the present invention includes a reaction chamber, a substrate holder, a showerhead plate, a first reactant source, a remote radical generator, a second reactant source, and an exhaust outlet. The showerhead plate is configured to define a reaction space between the showerhead plate and the substrate holder. The showerhead plate includes a plurality of passages leading into the reaction space. The substrate is disposed within the reaction space. A first non-radical reactant is supplied through the showerhead plate to the reaction space. The remote radical generator produces the radicals of a second reactant supplied from the second reactant source. The radicals are supplied directly to the reaction space without passing through the showerhead plate.

Abstract translation: 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 根据本发明的反应器包括反应室，基板保持器，喷头板，第一反应物源，远程自由基发生器，第二反应物源和排气出口。 喷头板构造成限定喷头板和衬底保持器之间的反应空间。 喷头板包括通向反应空间的多个通道。 衬底设置在反应空间内。 将第一非自由基反应物通过喷头板供应到反应空间。 远程自发发生器产生从第二反应物源提供的第二反应物的自由基。 自由基直接供应到反应空间，而不通过喷头板。