Gridless ion source for the vacuum processing of materials
    1.
    发明授权
    Gridless ion source for the vacuum processing of materials 失效
    无级离子源用于真空处理材料

    公开(公告)号:US5973447A

    公开(公告)日:1999-10-26

    申请号:US901036

    申请日:1997-07-25

    CPC分类号: H01J27/143

    摘要: Plasma beam apparatus and method for the purpose of vacuum processing temperature sensitive materials at high discharge power and high processing rates. A gridless, closed or non-closed Hall-Current ion source is described which features a unique fluid-cooled anode with a shadowed gap through which ion source feed gases are introduced while depositing feed gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. Thin vacuum gaps are also used between anode and non-anode components in order to preserve electrical isolation of the anode when depositing conductive coatings. The magnetic field of the Hall-Current ion source is produced by an electromagnet driven either by the discharge current or a periodically alternating current.

    摘要翻译: 等离子体束装置和方法,用于真空处理温度敏感材料的高放电功率和高加工速率。 描述了一种无栅,闭合或非闭合的霍尔电流离子源,其特征在于具有阴影间隙的独特的流体冷却阳极,通过该阴极间隙引入离子源进料气体,同时将原料气体注入到等离子体束中。 阴影间隙在阳极表面处提供良好维护的电活性区域,其保持相对不含非导电沉积物。 阳极放电区被绝对密封,以防止放电进入离子源的内部。 在阳极和非阳极组件之间也使用薄的真空间隙,以便在沉积导电涂层时保持阳极的电绝缘。 霍尔电流离子源的磁场由通过放电电流或周期性交流电驱动的电磁体产生。