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    Method for detecting embedded voids in a semiconductor substrate
    1.
    发明授权
    Method for detecting embedded voids in a semiconductor substrate 有权
    用于检测半导体衬底中的嵌入孔的方法

    公开(公告)号：US08735182B2

    公开(公告)日：2014-05-27

    申请号：US13490828

    申请日：2012-06-07

    申请人： Leonardus Leunissen ,  Sandip Halder ,  Eric Beyne

    发明人： Leonardus Leunissen ,  Sandip Halder ,  Eric Beyne

    IPC分类号： H01L21/66 ,  H01L21/00

    CPC分类号： H01L22/12 ,  H01L21/2885 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for detecting embedded voids present in a structure formed in or on a semiconductor substrate is described. The method includes performing a processing step P1 for forming the structure; measuring the mass M1 of the substrate; performing thermal treatment; measuring the mass M2 of the substrate; calculating the mass difference between the mass of the substrate measured before and after the performed thermal treatment; and deducing the presence of embedded voids in the structure by comparing the mass difference with a pre-determined value.

    摘要翻译： 描述了一种用于检测存在于形成于半导体衬底中的结构中的嵌入孔的方法。 该方法包括执行用于形成该结构的处理步骤P1; 测量衬底的质量M1; 进行热处理; 测量衬底的质量M2; 计算在进行的热处理之前和之后测量的基底的质量差之间的质量差; 并通过将质量差与预定值进行比较，推断结构中嵌入的空隙的存在。

    Method for Detecting Embedded Voids in a Semiconductor Substrate
    2.
    发明申请
    Method for Detecting Embedded Voids in a Semiconductor Substrate 有权
    用于检测半导体衬底中的嵌入孔的方法

    公开(公告)号：US20120315712A1

    公开(公告)日：2012-12-13

    申请号：US13490828

    申请日：2012-06-07

    申请人： Leonardus Leunissen ,  Sandip Halder ,  Eric Beyne

    发明人： Leonardus Leunissen ,  Sandip Halder ,  Eric Beyne

    IPC分类号： H01L21/66

    CPC分类号： H01L22/12 ,  H01L21/2885 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for detecting embedded voids present in a structure formed in or on a semiconductor substrate is described. The method includes performing a processing step P1 for forming the structure; measuring the mass M1 of the substrate; performing thermal treatment; measuring the mass M2 of the substrate; calculating the mass difference between the mass of the substrate measured before and after the performed thermal treatment; and deducing the presence of embedded voids in the structure by comparing the mass difference with a pre-determined value.

    摘要翻译： 描述了一种用于检测存在于形成于半导体衬底中的结构中的嵌入孔的方法。 该方法包括执行用于形成结构的处理步骤P1; 测量衬底的质量M1; 进行热处理; 测量衬底的质量M2; 计算在进行的热处理之前和之后测量的基底的质量差之间的质量差; 并通过将质量差与预定值进行比较，推断结构中嵌入的空隙的存在。

    Method for Reducing the Damage Induced by a Physical Force Assisted Cleaning
    3.
    发明申请
    Method for Reducing the Damage Induced by a Physical Force Assisted Cleaning 审中-公开
    减少物理力辅助清洁引起的伤害的方法

    公开(公告)号：US20100224215A1

    公开(公告)日：2010-09-09

    申请号：US12718732

    申请日：2010-03-05

    申请人： Paul Mertens ,  Sandip Halder ,  Antoine Pacco ,  Tom Janssens

    发明人： Paul Mertens ,  Sandip Halder ,  Antoine Pacco ,  Tom Janssens

    IPC分类号： B08B7/00

    CPC分类号： H01L21/02071

    摘要： Disclosed is a method for performing a physical force-assisted cleaning process on a patterned surface of a substrate, including providing a substrate having at least one patterned surface, supplying a cleaning liquid to the patterned surface, and applying a physical force to the cleaning liquid in contact with the patterned surface, whereby the physical force leads to bubble formation in the cleaning liquid. Furthermore, and prior to applying the physical force, an additive is supplied to the surface, and the additive is maintained in contact with the surface for a given time, the additive and the time being chosen so that a substantially complete wetting of the surface by the cleaning liquid is achieved.

    摘要翻译： 公开了一种在基板的图案化表面上进行物理力辅助清洁处理的方法，包括提供具有至少一个图案化表面的基板，向图案化表面供应清洁液体，并将物理力施加到清洗液体 与图案化表面接触，由此物理力导致清洁液体中的气泡形成。 此外，并且在施加物理力之前，向表面供应添加剂，并且添加剂与表面保持一定时间，添加剂和时间被选择为使得基本上完全润湿表面。 清洗液得以实现。

    Substrate for a superconducting thin-film strip conductor
    5.
    发明授权
    Substrate for a superconducting thin-film strip conductor 有权
    用于超导薄膜带导体的基板

    公开(公告)号：US08513163B2

    公开(公告)日：2013-08-20

    申请号：US12126242

    申请日：2008-05-23

    申请人： Michael Baecker ,  Theodor Schneller ,  Sandip Halder

    发明人： Michael Baecker ,  Theodor Schneller ,  Sandip Halder

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2461

    摘要： A high-temperature superconducting thin-film strip conductor (HTSL-CC) includes a metal substrate, a buffer layer chemically generated thereon and grown crystallographically unrotated in relation to the metal substrate, and a chemically generated superconducting coating thereon. The HTSL-CC possesses high texturing of the buffer layer since the metal substrate has a surface roughness RMS

    摘要翻译： 高温超导薄膜带状导体（HTSL-CC）包括金属基板，在其上化学生成的缓冲层，并相对于金属基板在晶体学上不旋转生长，并在其上形成化学生成的超导涂层。 由于金属基板具有RMS <50nm的表面粗糙度，所以HTSL-CC具有高的纹理化，并且由于并且缓冲层直接生长到其表面上而没有中间层，在结晶学上相对于晶体结构未旋转 的金属基板。