公开(公告)号：US20210234333A1

公开(公告)日：2021-07-29

申请号：US16901872

申请日：2020-06-15

申请人： Lumentum Japan, Inc.

发明人： Atsushi NAKAMURA ,  Kaoru OKAMOTO ,  Masatoshi ARASAWA ,  Tetsuya NISHIDA ,  Yasushi SAKUMA ,  Shigetaka HAMADA ,  Ryosuke NAKAJIMA

IPC分类号： H01S5/026 ,  H01S5/227 ,  H01S5/32 ,  H01S5/50

摘要： A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.

公开(公告)号：US20210057885A1

公开(公告)日：2021-02-25

申请号：US16845234

申请日：2020-04-10

申请人： Lumentum Japan, Inc.

发明人： Atsushi NAKAMURA ,  Takeshi KITATANI ,  Kaoru OKAMOTO ,  Shigenori HAYAKAWA

IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/32 ,  H01S5/343 ,  H01S5/06

摘要： A electro-absorption optical modulator includes a multiple quantum well composed of a plurality of layers including a plurality of quantum well layers and a plurality of barrier layers that are alternately stacked, the plurality of quantum well layers and the plurality of barrier layers including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the multiple quantum well being 10% or more and 150% or less of the p-type semiconductor layer in a p-type carrier concentration, and in the multiple quantum well, an effective carrier concentration which corresponds to a difference between the p-type carrier concentration and an n-type carrier concentration is ±10% or less of the p-type carrier concentration of the multiple quantum well.