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公开(公告)号：US20220200243A1
公开(公告)日：2022-06-23
申请号：US17654841
申请日：2022-03-15
申请人： Lumentum Japan, Inc.
发明人： Shigetaka HAMADA , Yasushi SAKUMA , Kouji NAKAHARA
摘要： A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.
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公开(公告)号：US20220006257A1
公开(公告)日：2022-01-06
申请号：US17447941
申请日：2021-09-17
申请人： Lumentum Japan, Inc.
摘要： The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 μm or more.
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公开(公告)号：US20210408760A1
公开(公告)日：2021-12-30
申请号：US17247317
申请日：2020-12-07
申请人： Lumentum Japan, Inc.
摘要： A semiconductor optical device may include a semiconductor substrate; a compound semiconductor layer on the semiconductor substrate; an additional insulating film on the pedestal portion of the compound semiconductor layer, the additional insulating film having an upper surface and a side surface at an inner obtuse angle between them; a passivation film covering the compound semiconductor layer and the additional insulating film except at least part of the mesa portion, the passivation film having a protrusion raised by overlapping with the additional insulating film; a mesa electrode on the at least part of the mesa portion; a pad electrode on the passivation film within the protrusion; and an extraction electrode on the passivation film, the extraction electrode being continuous within and outside the protrusion, the extraction electrode connecting the pad electrode and the mesa electrode, the extraction electrode being narrower in width than the pad electrode.
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公开(公告)号：US20240072513A1
公开(公告)日：2024-02-29
申请号：US18501199
申请日：2023-11-03
申请人： Lumentum Japan, Inc.
CPC分类号： H01S5/04256 , H01S5/0282 , H01S5/22 , H01S5/34
摘要： A semiconductor optical device may include a semiconductor substrate; a compound semiconductor layer on the semiconductor substrate; an additional insulating film on the pedestal portion of the compound semiconductor layer, the additional insulating film having an upper surface and a side surface at an inner obtuse angle between them; a passivation film covering the compound semiconductor layer and the additional insulating film except at least part of the mesa portion, the passivation film having a protrusion raised by overlapping with the additional insulating film; a mesa electrode on the at least part of the mesa portion; a pad electrode on the passivation film within the protrusion; and an extraction electrode on the passivation film, the extraction electrode being continuous within and outside the protrusion, the extraction electrode connecting the pad electrode and the mesa electrode, the extraction electrode being narrower in width than the pad electrode.
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公开(公告)号：US20210234333A1
公开(公告)日：2021-07-29
申请号：US16901872
申请日：2020-06-15
申请人： Lumentum Japan, Inc.
发明人： Atsushi NAKAMURA , Kaoru OKAMOTO , Masatoshi ARASAWA , Tetsuya NISHIDA , Yasushi SAKUMA , Shigetaka HAMADA , Ryosuke NAKAJIMA
摘要： A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.
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公开(公告)号：US20210050713A1
公开(公告)日：2021-02-18
申请号：US16588167
申请日：2019-09-30
申请人： Lumentum Japan, Inc.
发明人： Shigetaka HAMADA , Yasushi SAKUMA , Kouji NAKAHARA
摘要： A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.
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公开(公告)号：US20200044417A1
公开(公告)日：2020-02-06
申请号：US16419043
申请日：2019-05-22
申请人： Lumentum Japan, Inc.
摘要： The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 μm or more.
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