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    OPTICAL SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
    2.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20220115842A1

    公开(公告)日：2022-04-14

    申请号：US17214580

    申请日：2021-03-26

    申请人： Lumentum Japan, Inc.

    发明人： Hayato TAKITA ,  Atsushi NAKAMURA ,  Shunya YAMAUCHI ,  Hideaki ASAKURA

    IPC分类号： H01S5/227 ,  H01S5/34 ,  H01S5/042 ,  H01S5/026 ,  H01S5/0225 ,  H01S5/22 ,  H01S5/12

    摘要： An optical semiconductor device includes a semiconductor substrate with a protrusion that forms a lower end portion of a mesa stripe structure in a stripe shape extending in a first direction; a multi-quantum well layer in a stripe shape extending in the first direction on the protrusion, wherein the multi-quantum well layer forms an intermediate portion of the mesa stripe structure; a semiconductor layer in a stripe shape extending in the first direction on the intermediate portion, wherein the semiconductor layer forms an upper end portion of the mesa stripe structure; and a semi-insulating semiconductor layer in contact with side surfaces of the mesa stripe structure on both sides in a second direction perpendicular to the first direction. The optical semiconductor device may include a first electrode on a surface of the semiconductor substrate and/or a second electrode on the upper end surface of the mesa stripe structure.

    SEMICONDUCTOR OPTICAL AMPLIFIER INTEGRATED LASER
    3.
    发明申请
    SEMICONDUCTOR OPTICAL AMPLIFIER INTEGRATED LASER 有权

    公开(公告)号：US20210234333A1

    公开(公告)日：2021-07-29

    申请号：US16901872

    申请日：2020-06-15

    申请人： Lumentum Japan, Inc.

    发明人： Atsushi NAKAMURA ,  Kaoru OKAMOTO ,  Masatoshi ARASAWA ,  Tetsuya NISHIDA ,  Yasushi SAKUMA ,  Shigetaka HAMADA ,  Ryosuke NAKAJIMA

    IPC分类号： H01S5/026 ,  H01S5/227 ,  H01S5/32 ,  H01S5/50

    摘要： A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.

    ELECTRO-ABSORPTION OPTICAL MODULATOR AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    ELECTRO-ABSORPTION OPTICAL MODULATOR AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210057885A1

    公开(公告)日：2021-02-25

    申请号：US16845234

    申请日：2020-04-10

    申请人： Lumentum Japan, Inc.

    发明人： Atsushi NAKAMURA ,  Takeshi KITATANI ,  Kaoru OKAMOTO ,  Shigenori HAYAKAWA

    IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/32 ,  H01S5/343 ,  H01S5/06

    摘要： A electro-absorption optical modulator includes a multiple quantum well composed of a plurality of layers including a plurality of quantum well layers and a plurality of barrier layers that are alternately stacked, the plurality of quantum well layers and the plurality of barrier layers including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the multiple quantum well being 10% or more and 150% or less of the p-type semiconductor layer in a p-type carrier concentration, and in the multiple quantum well, an effective carrier concentration which corresponds to a difference between the p-type carrier concentration and an n-type carrier concentration is ±10% or less of the p-type carrier concentration of the multiple quantum well.

    ELECTRO-ABSORPTION MODULATOR
    6.
    发明申请
    ELECTRO-ABSORPTION MODULATOR 有权

    公开(公告)号：US20230006414A1

    公开(公告)日：2023-01-05

    申请号：US17645177

    申请日：2021-12-20

    申请人： Lumentum Japan, Inc.

    发明人： Hideaki ASAKURA ,  Atsushi NAKAMURA ,  Hayato TAKITA ,  Shunya YAMAUCHI

    IPC分类号： H01S5/026 ,  G02F1/015 ,  G02F1/017 ,  G02F1/025 ,  H01S5/343 ,  H01S5/227

    摘要： Provided is an electro-absorption modulator that includes a substrate, a mesa structure, a first conductivity type electrode, and a second conductivity type electrode. The first conductivity type electrode includes a mesa-top electrode, a pad electrode, and a lead-out wire electrode. The mesa structure has a light input end, to which light is to be input from outside, and a light output end, which is on a side of the mesa structure that is opposite of the light input end. A connection position between a center position in a short-side direction of the lead-out wire electrode and the mesa-top electrode is closer to the light output end side in a long-side direction of the mesa-top electrode. The connection position is a position that is less than 50% from the light output end side with respect to a length in the long-side direction of the mesa-top electrode.

    OPTICAL SEMICONDUCTOR DEVICE
    8.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220166193A1

    公开(公告)日：2022-05-26

    申请号：US17304526

    申请日：2021-06-22

    申请人： Lumentum Japan, Inc.

    发明人： Atsushi NAKAMURA ,  Hayato TAKITA ,  Shigetaka HAMADA ,  Ryosuke NAKAJIMA ,  Masatoshi ARASAWA ,  Ryu WASHINO

    IPC分类号： H01S5/22 ,  H01S5/026 ,  H01S5/227 ,  H01S5/12

    摘要： To provide an optical semiconductor device having excellent long-term reliability, the optical semiconductor device includes: a substrate; a mesa structure provided on the substrate; a semiconductor burial layer provided in contact with two sides of the mesa structure; and an electrode containing Au, which is provided above the semiconductor burial layer. The mesa structure includes a first conductivity type semiconductor layer, a multiple-quantum well layer, and a second conductivity type semiconductor layer, which are stacked in the stated order from a substrate side. The semiconductor burial layer includes a first semi-insulating InP layer provided in contact with side portions of the mesa structure, a first anti-diffusion layer provided in contact with the first semi-insulating InP layer, and a second semi-insulating InP layer provided on the first anti-diffusion layer. The first anti-diffusion layer has an Au diffusion constant that is smaller than that of the first semi-insulating InP layer.

    MODULATION DOPED SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR
    9.
    发明申请
    MODULATION DOPED SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR 有权

    公开(公告)号：US20210057886A1

    公开(公告)日：2021-02-25

    申请号：US16845235

    申请日：2020-04-10

    申请人： Lumentum Japan, Inc.

    发明人： Takayuki NAKAJIMA ,  Atsushi NAKAMURA ,  Yuji SEKINO

    IPC分类号： H01S5/30 ,  H01S5/34

    摘要： A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.