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公开(公告)号：US5929498A
公开(公告)日：1999-07-27
申请号：US40502
申请日：1998-03-17
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , G01L9/00 , G01L9/12 , H01L21/762 , H01L21/764 , H01L21/768 , H01L23/10 , H01L29/84 , H01L29/82
CPC分类号： B81C1/00293 , B81C1/00301 , G01L9/0042 , G01L9/0073 , H01L21/76251 , H01L21/764 , H01L21/76898 , H01L23/10 , B81B2207/092 , B81C2203/019 , B81C2203/036 , H01L2924/0002
摘要： A semiconductor device has a flexible structure bonded to a semiconductor substructure to form a cavity. The flexible structure is bonded over a conducting feed-through without the feed-through interfering with a hermetic seal formed by bonding. One embodiment of the device includes depressions that contain edges of a diffused feed-through so that imperfections at the edge of the diffusion do not interfere with bonding. The flexible structure is bonded to elevated areas thus hiding the imperfections. In one embodiment, a first elevated region is surrounded by a second elevated region, and diffusion for the feed-through extends from an active region in the cavity across the first elevated region with edges of the diffusion being between the first and second elevated regions. The flexible structure can thus bond to the first and second elevated regions without interference from the edge of the diffused feed-through. A via through the flexible structure to the first elevated region provides electrical contact with the active region. Another embodiment has either a surface or buried well in a semiconductor structure and extending from an active region in the cavity to a point outside the perimeter of the flexible structure. The well provides a conductive feed-through structure without creating imperfections that would interfere with the bonding that seals the cavity.
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公开(公告)号：US5923952A
公开(公告)日：1999-07-13
申请号：US897124
申请日：1997-07-18
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , G01L9/00 , G01L9/12 , H01L21/762 , H01L21/764 , H01L21/768 , H01L23/10 , H01L29/84 , H01L21/00
CPC分类号： B81C1/00293 , B81C1/00301 , G01L9/0042 , G01L9/0073 , H01L21/76251 , H01L21/764 , H01L21/76898 , H01L23/10 , B81B2207/092 , B81C2203/019 , B81C2203/036 , H01L2924/0002
摘要： A semiconductor device has a flexible structure bonded to a semiconductor substructure to form a cavity. The flexible structure is bonded over a conducting feed-through without the feed-through interfering with a hermetic seal formed by bonding. One embodiment of the device includes depressions that contain edges of a diffused feed-through so that imperfections at the edge of the diffusion do not interfere with bonding. The flexible structure is bonded to elevated areas thus hiding the imperfections. In one embodiment, a first elevated region is surrounded by a second elevated region, and diffusion for the feed-through extends from an active region in the cavity across the first elevated region with edges of the diffusion being between the first and second elevated regions. The flexible structure can thus bond to the first and second elevated regions without interference from the edge of the diffused feed-through. A via through the flexible structure to the first elevated region provides electrical contact with the active region. Another embodiment has either a surface or buried well in a semiconductor structure and extending from an active region in the cavity to a point outside the perimeter of the flexible structure. The well provides a conductive feed-through structure without creating imperfections that would interfere with the bonding that seals the cavity.
摘要翻译： 半导体器件具有结合到半导体子结构以形成空腔的柔性结构。 柔性结构粘合在导电馈通上，而不会干扰通过接合形成的气密密封。 该装置的一个实施例包括含有扩散馈通边缘的凹陷，使得扩散边缘处的缺陷不会妨碍接合。 柔性结构结合到高架区域，从而隐藏缺陷。 在一个实施例中，第一升高区域被第二升高区域包围，并且用于馈通的扩散从空腔中的有源区域穿过第一升高区域延伸，扩散边缘在第一和第二升高区域之间。 因此，柔性结构可以连接到第一和第二升高区域而不受来自扩散馈通的边缘的干扰。 通过柔性结构到第一升高区域的通孔提供与活性区域的电接触。 另一个实施例具有半导体结构中的表面或掩埋阱，并且从空腔中的有源区域延伸到柔性结构的周边外的点。 该井提供导电的馈通结构，而不产生将干扰密封空腔的接合的缺陷。
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3.发明授权Process for making a semiconductor sensor with a fusion bonded flexible structure 失效制造具有熔接粘结柔性结构的半导体传感器的工艺
公开(公告)号：US5576251A
公开(公告)日：1996-11-19
申请号：US395397
申请日：1995-02-22
CPC分类号： H01L29/84 , B81C1/00238 , G01B7/14 , G01L9/0073 , G01L9/0098 , G01P15/124 , B81B2203/0127 , B81C2203/036 , B81C2203/038 , G01P2015/0828
摘要： Fabrication of semiconductor devices with movable structures includes local oxidation of a wafer and oxide removal to form a depression in an elevated bonding surface. A second wafer is fusion bonded to the elevated bonding surface and shaped to form a flexible membrane. An alternative fabrication technique forms a spacer having a depression on a first wafer and active regions on a second wafer, and fusion bonds the wafers together with the depression over the active regions. Devices formed are integrable with standard MOS devices and include FETs, capacitors, and sensors with movable membranes. An FET sensor has gate and drain coupled together and a drain-source voltage which depends on the gate's deflection. Selected operating current, channel length, and channel width provide a drain-source voltage linearly related to gate deflection. Alternatively, two transistors subjected to the same gate deflection provide a differential voltage related to the square root of the deflection if channel currents or channel widths differ. Transistors subjected to the different gate deflections provide a differential signal that cancels effects that are independent of deflection. A capacitive sensor includes a doped region underlying the center of a flexible membrane. The doped region is isolated from a surrounding region which is biased at the voltage of the membrane.
摘要翻译： 具有可移动结构的半导体器件的制造包括晶片的局部氧化和氧化物去除以在升高的结合表面中形成凹陷。 第二个晶片被熔合到提升的粘合表面上并成形为形成柔性膜。 替代的制造技术形成了在第一晶片上具有凹陷并且在第二晶片上具有有源区域的间隔物，并且在活性区域上将晶片与凹陷熔合在一起。 形成的器件可与标准MOS器件集成，包括FET，电容器和带有可移动膜的传感器。 FET传感器具有耦合在一起的栅极和漏极以及取决于栅极偏转的漏极 - 源极电压。 所选的工作电流，沟道长度和通道宽度提供与栅极偏转线性相关的漏极 - 源极电压。 或者，如果沟道电流或沟道宽度不同，则经受相同栅极偏转的两个晶体管提供与偏转的平方根相关的差分电压。 经受不同门极偏转的晶体管提供了抵消与偏转无关的影响的差分信号。 电容传感器包括在柔性膜的中心下方的掺杂区域。 掺杂区域与偏置在膜电压的周围区域隔离。
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公开(公告)号：US5578843A
公开(公告)日：1996-11-26
申请号：US318918
申请日：1994-10-06
CPC分类号： H01L29/84 , B81C1/00238 , G01B7/14 , G01L9/0073 , G01L9/0098 , G01P15/124 , B81B2203/0127 , B81C2203/036 , B81C2203/038 , G01P2015/0828
摘要： Fabrication of semiconductor devices with movable structures includes local oxidation of a wafer and oxide removal to form a depression in an elevated bonding surface. A second wafer is fusion bonded to the elevated bonding surface and shaped to form a flexible membrane. An alternative fabrication technique forms a spacer having a depression on a first wafer and active regions on a second wafer, and fusion bonds the wafers together with the depression over the active regions. Devices formed are integrable with standard MOS devices and include FETs, capacitors, and sensors with movable membranes. An FET sensor has gate and drain coupled together and a drain-source voltage which depends on the gate's deflection. Selected operating current, channel length, and channel width provide a drain-source voltage linearly related to gate deflection. Alternatively, two transistors subjected to the same gate deflection provide a differential voltage related to the square root of the deflection if channel currents or channel widths differ. Transistors subjected to the different gate deflections provide a differential signal that cancels effects that are independent of deflection. A capacitive sensor includes a doped region underlying the center of a flexible membrane. The doped region is isolated from a surrounding region which is biased at the voltage of the membrane.
摘要翻译： 具有可移动结构的半导体器件的制造包括晶片的局部氧化和氧化物去除以在升高的结合表面中形成凹陷。 第二个晶片被熔合到提升的粘合表面上并成形为形成柔性膜。 替代的制造技术形成了在第一晶片上具有凹陷并且在第二晶片上具有有源区域的间隔物，并且在活性区域上将晶片与凹陷熔合在一起。 形成的器件可与标准MOS器件集成，包括FET，电容器和带有可移动膜的传感器。 FET传感器具有耦合在一起的栅极和漏极以及取决于栅极偏转的漏极 - 源极电压。 所选的工作电流，沟道长度和通道宽度提供与栅极偏转线性相关的漏极 - 源极电压。 或者，如果沟道电流或沟道宽度不同，则经受相同栅极偏转的两个晶体管提供与偏转的平方根相关的差分电压。 经受不同门极偏转的晶体管提供了抵消与偏转无关的影响的差分信号。 电容传感器包括在柔性膜的中心下方的掺杂区域。 掺杂区域与偏置在膜电压的周围区域隔离。
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