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公开(公告)号:US20210081140A1
公开(公告)日:2021-03-18
申请号:US16571249
申请日:2019-09-16
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Ping-Hsien LIN , Wei-Chen WANG , Hsiang-Pang LI , Shu-Hsien LIAO , Che-Wei TSAO , Yuan-Hao CHANG , Tei-Wei KUO
Abstract: The present disclosure provides a memory system, a method of operating memory, and a non-transitory computer readable storage medium. The memory system includes a memory chip and a controller. The controller is coupled with the memory chip, which the controller is configured to: receive a first data corresponding to a first version from a file system in order to store the first data corresponding to the first version in a first page of the flash memory chip; and program the first data corresponding to a second version in the first page in response to the first data of the second version, which the second version is newer than the first version.