公开(公告)号：US20210081140A1

公开(公告)日：2021-03-18

申请号：US16571249

申请日：2019-09-16

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Ping-Hsien LIN ,  Wei-Chen WANG ,  Hsiang-Pang LI ,  Shu-Hsien LIAO ,  Che-Wei TSAO ,  Yuan-Hao CHANG ,  Tei-Wei KUO

IPC: G06F3/06 ,  G11C16/10

Abstract: The present disclosure provides a memory system, a method of operating memory, and a non-transitory computer readable storage medium. The memory system includes a memory chip and a controller. The controller is coupled with the memory chip, which the controller is configured to: receive a first data corresponding to a first version from a file system in order to store the first data corresponding to the first version in a first page of the flash memory chip; and program the first data corresponding to a second version in the first page in response to the first data of the second version, which the second version is newer than the first version.

公开(公告)号：US20210081274A1

公开(公告)日：2021-03-18

申请号：US16571260

申请日：2019-09-16

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yung-Chun LI ,  Ping-Hsien LIN ,  Kun-Chi CHIANG ,  Chien-Chung HO

IPC: G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G11C11/409 ,  G11C11/4074

Abstract: A memory data management method includes the following steps: reading a plurality of data of a plurality of memory cells of a memory block; determining whether error bits of the data exceed an error correction code (ECC) threshold; if the error bits of the data exceed the ECC threshold, a programming process being executed to enhance a first state data of the data for exceeding a first threshold, to enhance a second state data of the data for exceeding a second threshold, and to enhance a third state data of the data for exceeding a third threshold.

公开(公告)号：US20200051620A1

公开(公告)日：2020-02-13

申请号：US16057871

申请日：2018-08-08

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yung-Chun LI ,  Ping-Hsien LIN

IPC: G11C11/56 ,  G11C16/10 ,  G11C16/34

Abstract: Provided is a programming method for a memory device including a memory array and a controller. The programming method including: controlling programming on a first page of a first word line by the controller; controlling programming on a first page of a second word line by the controller, the second word line being adjacent to the first word line; controlling for performing a first programming operation on a second page of the first word line by the controller; controlling programming on a first page of a third word line by the controller, the third word line being adjacent to the second word line; controlling for performing the first programming operation on a second page of the second word line by the controller; and controlling for performing a second programming operation on the second page of the first word line by the controller.